Semiconductor Manufacturing International (shanghai) Corporation

Smic Advanced Technology Research & Development (shanghai) Corp.

Imec International

Cheng-Jui Yang

Yang Liu

Shaofeng Yu

Hai Zhao

Gang Mao

YongMeng Lee

The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor. The semiconductor device includes a substrate; two fins located on the substrate and extending along a first direction; an isolation material layer surrounding the fins, comprising a first isolation regions located at an end region between the two fins along the first direction, and a second isolation region located at sides of the fins along a second direction that is different from the first direction, wherein an upper surface of the first isolation region substantially align with an upper surfaces of the fins, and an upper surface of the second isolation region is lower than the upper surface of the fins; and a first insulating layer on the first isolation region.

Method for manufacturing a semiconductor device having a fin located on a substrate

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Shanghai, China

Cheng-Jui Yang