Industrial Technology Research Institute

Cheng-Ju Tsai

Yung-Hui Yeh

Jung-Jie Huang

Chen-Pang Kung

Chan-Jui Liu

Chih-Yuan Tseng

Bo-Chu Chen

I Hsuan Peng

Ding-Kang Shih

An active photosensing pixel is disclosed, in which a two-terminal photosensing transistor has a first terminal coupled to a first node, a second terminal coupled to a first selection line and a control terminal connected to the second terminal. A driving transistor has a first terminal coupled to a first reference voltage, a second terminal coupled to an output line and a control terminal connected to the first node. A reset transistor has a first terminal connected to the first node, a second terminal coupled to a second reference voltage and a control terminal coupled to a second selection line.

Active photosensing pixel with two-terminal photosensing transistor

This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline active layer, and being separated from an incubation layer in a bottom interface of the microcrystalline active layer. The inversion layer channel is formed in the crystallized layer of the top interface of the microcrystalline active layer. As such, the present microcrystalline thin film transistor has better electrical performance and reliability.

Microcrystalline silicon thin film transistor and method for manufacturing the same

A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage.

Method for fabricating polysilicon film

Growing community of inventors

Taipei, Taiwan

Cheng-Ju Tsai