Taiwan Semiconductor Manufacturing Comp. Ltd.

Formosa Epitaxy Incorporation

Cheng-I Chu

Yee-Chia Yeo

Huicheng Chang

Chen-Fong Tsai

Jyh-Cherng Sheu

Han-De Chen

Yi-Rui Chen

Keng-Chu Lin

Shyi-Ming Pan

Yu-Yun Peng

Ru-Shi Liu

Wei-Kang Cheng

Hsu-Kai Chang

Sen-Hong Syue

Chen-Hao Wu

Chen-Hong Lee

Wen-Kai Lin

Yun Chen Teng

Li-Chi Yu

Kenichi Sano

Huang-Lin Chao

Yu-Wei Lu

Yu-chih Lin

Kuei-Lin Chan

Yoh-Rong Liu

Yi-Sheng Ting

Wei-Ting Yeh

Zheng-Yong Liang

Chia-Yun Cheng

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.

Metal nanoparticles in an amorphous bonding layer between a device substrate and carrier substrate

A method includes placing a first wafer on a first wafer stage, placing a second wafer on a second wafer stage, and pushing a center portion of the first wafer to contact the second wafer. A bonding wave propagates from the center portion to edge portions of the first wafer and the second wafer. When the bonding wave propagates from the center portion to the edge portions of the first wafer and the second wafer, a stage gap between the top wafer stage and the bottom wafer stage is reduced.

Dynamic bonding gap control and tool for wafer bonding

Wafer bonding apparatus and method are provided. A method includes performing a first plasma activation process on a first surface of a first wafer. The first plasma activation process forms a first high-activation region and a first low-activation region on the first surface of the first wafer. A first cleaning process is performed on the first surface of the first wafer. The first cleaning process forms a first plurality of silanol groups in the first high-activation region and the first low-activation region. The first high-activation region includes more silanol groups than the first low-activation region. The first wafer is bonded to a second wafer.

Wafer bonding apparatus and method

Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.

Method of forming a nano-FET semiconductor device

Semiconductor devices having improved heat dissipation and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure, the front-side interconnect structure including front-side conductive lines; a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including backside conductive lines, the backside conductive lines having line widths greater than line widths of the front-side conductive lines; and a first heat dissipation substrate coupled to the backside interconnect structure.

Heat dissipation for semiconductor devices and methods of manufacture

A method of manufacturing an oxynitride phosphor is revealed. A precursor is sintered under 0.1-1000 MPa nitrogen pressure for synthesis of an oxynitride phosphor. The general formula of the oxynitride phosphors is BaSiON:EuBaSiON:Euor BaSiON:Eu(0.00001&#x2266;x&#x2266;5; 0.00001). Thus pure phosphor can be mass-produced.

Method of manufacturing oxynitride phosphor

Growing community of inventors

Taipei, Taiwan

Cheng-I Chu