United Microelectronics Corp.

Industrial Technology Research Institute

Unimicron Technology Corporation

Microjet Technology Company, Ltd.

Quanta Computer Incorporated

Cheng-Hung Yu

Hsin-Ting Tsai

Chin-Kuang Liu

Ming-Hsin Lee

Cheng-Po Yu

Ying-Lun Chang

Ming-Huan Yang

Tai-Jui Wang

Chieh-Wei Feng

Tse-Chi Mou

Chin-Yi Chou

Yan-Yi Lu

Chin-Chin Wang

Wei-Hong Chuang

Kuei-Chang Tung

Tzyy-Jang Tseng

Wei-Yuan Cheng

Chao-Kai Cheng

Chang-Ming Lee

Han-Pei Huang

Yun-Teng Shih

Kuo-Chan Hsu

Chung-Wei Wang

Yu-Hua Chung

Chi-Liang Kuo

Kuang-Ching Fan

Yu-Shin Liao

Chia-Chi Wu

Kun-Yen Hsu

Chi-En Li

A wristband biosensing system, a wristband biosensing apparatus, and a biological sensing method are provided. The system includes a wristband body worn on a wrist of a user, at least one physiological signal sensor, at least one deformation sensor, and a processing device coupled to the physiological signal sensor and the deformation sensor. The physiological signal sensor is disposed on the wristband body at a position corresponding to at least one sensing portion of the wrist to detect a physiological signal of each sensing portion. The deformation sensor is disposed around each physiological signal sensor to detect deformation of each sensing portion and output a deformation signal. The processing device receives the physiological signal and the deformation signal, inquires a compensation signal corresponding to the deformation signal, and corrects the physiological signal by using the compensation signal, so as to output a corrected physiological signal of each sensing portion.

Wristband biosensing system, wristband biosensing apparatus and biosensing method

A system in package structure and an electrostatic discharge protection structure thereof are provided. The electrostatic discharge protection structure includes a redistribution layer and a first transistor array. The redistribution layer has a first electrode and a second electrode. The first transistor array is coupled to a pin end of at least one integrated circuit, the first electrode and the second electrode. The first transistor array has a plurality of transistors. A plurality of first transistors of the transistors are coupled in parallel, and a plurality of second transistors of the transistors are coupled in parallel. The first transistors and the second transistors are configured to be turned on for dissipating an electrostatic discharge current.

System in package structure for perform electrostatic discharge operation and electrostatic discharge protection structure thereof

A chip package structure including a redistribution structure layer, at least one chip, and an encapsulant is provided. The redistribution structure layer includes at least one redistribution circuit, at least one transistor electrically connected to the redistribution circuit, and a plurality of conductive vias electrically connected to the redistribution circuit and the transistor. The chip is disposed on the redistribution structure layer and electrically connected to the redistribution structure layer. The encapsulant is disposed on the redistribution structure layer and at least encapsulates the chip. A manufacturing method of a chip package structure is also provided.

Chip package structure and manufacturing method thereof

A power source switching circuit for powering an electronic component includes a soft-start circuit, a first input connected to a standby power source, a second input connected to a main power source, and an output. The output provides a voltage to the electronic component and is configured to be alternatively electrically connected to the first input or the second input. When the power source switching circuit is in a standby mode, the output is connected to the first input and the standby power source. When the power source switching circuit is in a main mode, the output is connected to the second input and the main power source. When the power source switching circuit is initially activated to the standby mode, the soft-start circuit is enabled. When the power source switching circuit subsequently switched from the main mode to the standby mode, the soft-start circuit is disabled.

Power-switching circuit with soft-start circuit

A color filter pattern including a plurality of color filters arranged in a pattern and the manufacturing method thereof are provided. By performing at least one two-stage exposure process to a color filter layer, the plurality of color filters are formed with a sharp profile.

Color filter pattern and manufacturing method thereof

A wafer cleaning device comprising a wafer stage for holding a wafer having a surface to be washed, a first nozzle positioned above the wafer, a second nozzle positioned above the wafer. A first height is between the first nozzle and the surface and a second height is between the second nozzle and the surface, wherein the first height is shorter than the second height.

Wafer cleaning device and method thereof

Color filter and manufacturing method thereof

A method for fabricating a color filter layer, which is applied to an integrated circuit manufacturing process, includes the following steps. Firstly, a substrate is provided, and a groove structure is formed on the substrate. The groove structure includes a plurality of positive photoresist patterns and a plurality of trenches. Then, a first group of color filter patterns is formed in the trenches. The plurality of positive photoresist patterns is removed, so that a portion of a top surface of the substrate is exposed. Then, a second group of color filter patterns is formed on the exposed top surface of the substrate.

Color filter layer and method of fabricating the same

A method for fabricating an image sensor, wherein the method comprises steps as follows: Firstly, a transparent substrate is formed on a working substrate. Pluralities of micro lens are formed in the transparent substrate, wherein the lenses have a refraction ratio differing from that of the transparent substrate. Subsequently, a color filter is formed on the lenses. Afterward, the color filter is engaged with an image sensing device by flipping around the working substrate.

Method for fabricating optical micro structure and applications thereof

A method for manufacturing a color filter array having hybrid color filters includes providing a high-grade photoresist and a low-grade photoresist, forming a plurality of first color filters on a substrate, and forming a plurality of second color filters and a plurality of third color filters on the substrate. The first color filters include the high-grade photoresist, and the second color filters and the third color filters include the low-grade photoresist. The high-grade photoresist of the first color filters includes a first amount of large size pigments in one unit area and the low-grade photoresists of the second color filters and the third color filters include a second amount of large size pigments in one unit area. A ratio of the second amount to the first amount is equal to or larger than 1.

Color filter array having hybrid color filters and manufacturing method thereof

Wafer cleaning device

A method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a top surface having a dishing structure, an under layer filled into the dishing structure and having a refraction index greater than that of the dielectric layer, a filter array disposed on the under layer corresponding to the sensor array, and a microlens array disposed above the filter array. A top layer may be additionally disposed to cover the filter array and the microlens array is disposed on the top layer.

Method of fabricating an image sensor structure

An image sensor structure and a method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a top surface having a dishing structure, an under layer filled into the dishing structure and having a refraction index greater than that of the dielectric layer, a filter array disposed on the under layer corresponding to the sensor array, and a microlens array disposed above the filter array. A top layer may be additionally disposed to cover the filter array and the microlens array is disposed on the top layer.

Image sensor structure with different pitches or shapes of microlenses

A circuit board including a first dielectric layer having a first surface and a second surface, a first circuit layer, a second dielectric layer, and a second circuit layer is provided. At least one trench is formed on the first surface, and the first circuit layer is formed on an inside wall of the trench. In addition, the second dielectric layer is disposed in the trench, and covers the first circuit layer. The second circuit layer is disposed in the trench, and the second dielectric layer is located between the first circuit layer and the second circuit layer. A manufacturing method of the circuit board is further provided.

Circuit board and manufacturing method thereof

A method for fabricating an image sensor is disclosed. First, a semiconductor substrate is provided, in which a photosensitive region is defined on the semiconductor substrate. At least one photosensitive material is then formed on the semiconductor substrate, and a first exposure process is performed to form a tapered pattern in the photosensitive material. A second exposure process is performed to form a straight foot pattern in the photosensitive material, and a developing process is performed to remove the tapered pattern and straight foot pattern to form the photosensitive material into a plurality of photosensitive blocks. A reflow process is conducted thereafter to form the photosensitive blocks into a plurality of microlenses.

Growing community of inventors

Taoyuan County, Taiwan

Cheng-Hung Yu