Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Cheng Hung Shen

Chen-Shien Chen

Tin-Hao Kuo

Chen-Cheng Kuo

Yao-Chun Chuang

Yen-Teng Ho

Chenming Hu

Shu-Jui Chang

Chen Han Chou

Kai-Yu Peng

Chia Hsing Wu

A device comprises a plurality of 2D semiconductor nanostructures, a gate structure, a source region, and a drain region. The plurality of 2D semiconductor nanostructures extend in a first direction above a substrate and arranged in a second direction substantially perpendicular to the first direction. The gate structure surrounds each of the plurality of 2D semiconductor nanostructures. The source region and the drain region are respectively on opposite sides of the gate structure.

Transistors having two-dimensional semiconductor channels

Substrate stand-offs for use with semiconductor devices are provided. Active pillars and dummy pillars are formed on a first substrate such that the dummy pillars may have a height greater than a height of the active pillars. The dummy pillars act as stand-offs when joining the first substrate to a second substrate, thereby creating greater uniformity. In an embodiment, the dummy pillars may be formed simultaneously as the active pillars by forming a patterned mask having openings with a smaller width for the dummy pillars than for the active pillars. When an electro-plating process of the like is used to form the dummy and active pillars, the smaller width of the dummy pillar openings in the patterned mask causes the dummy pillars to have a greater height than the active pillars.

Substrate stand-offs for semiconductor devices

Growing community of inventors

Taipei, Taiwan

Cheng Hung Shen