Mediatek Corporation

Industrial Technology Research Institute

National Chung Shan Institute of Science and Technology

Cheng Hua Lin

Chih-Wen Hsiung

Yan-Liang Ji

Ying Chieh Hung

Lain-Tze Lee

Chu-Wei Hu

Shu-Jiau Chiou

Shau-Feng Chang

Shao-Chan Yin

Jing-Hong Chen

Wen Chung Chang

Chi J Chen

Tin Y Liu

Wen S Ko

Tsung-Yeh Liu

Shi K Chen

A MOS transistor structure is provided. The MOS transistor structure includes a semiconductor substrate having an active area including a first edge and a second edge opposite thereto. A gate layer is disposed on the active area of the semiconductor substrate and has a first edge extending across the first and second edges of the active area. A source region having a first conductivity type is in the active area at a side of the first edge of the gate layer and between the first and second edges of the active area. First and second heavily doped regions of a second conductivity type are in the active area adjacent to the first and second edges thereof, respectively, and spaced apart from each other by the source region.

MOS transistor structure with hump-free effect

A semiconductor device capable of high-voltage operation includes a semiconductor substrate having a first conductivity type. A first well doped region is formed in the semiconductor substrate, having a second conductivity type that is the opposite of the first conductivity type. A first doped region and a second doped region are formed on the first well doped region, having the second conductivity type. A first gate structure is formed over the first well doped region and adjacent to the first doped region. A second gate structure overlaps the first gate structure and the first well doped region. A third gate structure is formed beside the second gate structure and close to the second doped region. The top surface of the first well doped region between the second gate structure and the third gate structure avoids having any gate structure and silicide formed thereon.

Semiconductor device capable of high-voltage operation

A semiconductor device capable of high-voltage operation includes a semiconductor substrate having a first conductivity type. A first well doped region is formed in a portion of the semiconductor substrate. The first well doped region has a second conductivity type. A first doped region is formed on the first well doped region, having the second conductivity type. A second doped region is formed on the first well doped region and is separated from the first doped region, having the second conductivity type. A first gate structure is formed over the first well doped region and is adjacent to the first doped region. A second gate structure is formed beside the first gate structure and is close to the second doped region. A third gate structure is formed overlapping a portion of the first gate structure and a first portion of the second gate structure.

The present invention mainly provides a novel microchannel structure comprising a plurality of first fluid-guiding channels, a plurality of micro fluid-guiding channels and a plurality of second fluid-guiding channels. Particularly, the first fluid-guiding channel has an arc-shaped fluid-guiding end corner communicating with a first channel opening of the micro fluid-guiding channel, and the second fluid-guiding channel has an arc-shaped fluid-guiding start corner communicating with a second channel opening of the micro fluid-guiding channel. Therefore, when a refrigerant fluid flows in the heat sink, the flow speed of the refrigerant fluid would be changed because the cross sectional area of an U-shaped fluid-guiding channel constructed by the arc-shaped fluid-guiding end corner, the micro fluid-guiding channel and the arc-shaped fluid-guiding start corner varies along the flow direction of the refrigerant fluid, such that the heat dissipating ability of the heat sink is enhanced without increasing the power of circulation pump.

Microchannel structure and heat sink having the same

A semiconductor device includes a semiconductor substrate and a first well region formed in the semiconductor substrate. An insulator is formed in and over a portion of the first well region and a second well region is formed in the first well region at a first side of the insulator. A first doped region is formed in the second well region, and a second doped region is formed in the first well region at a second side opposite the first side of the insulator. A gate structure is formed over the insulator, the first well region between the second well region and the insulator, and the second well region. An isolation element is formed in the semiconductor substrate, surrounding the first well region and the second well region. The first and second doped regions are formed with asymmetric configurations from a top view.

The disclosure provides a method for treating hepatitis C, including: administering an effective amount of a proanthocyanidins oligomer to a subject in need, wherein the structure of the proanthocyanidins oligomer is shown as Formula (I): and in Formula (I), N is an integer of about 1-18.

Method for treating hepatitis C

A process for producing a rare earth magnet of magnetically improved performance wherein a specific titanate coupling agent is added in one step of the process to enhance the oxidation resistance of the raw materials during production and a special degassing step is incorporated to allow for the removal of the residual titanate coupling agent. The resultant rare earth magnet exhibits improved maximum magnetic energy product ((BH).sub.max) and magnetic coercive force (H.sub.c) as well as other magnetic properties. Rare earth magnet produced by the process is also disclosed.

Process for producing rare earth magnet

A process for preparing by a reduction/diffusion method rare earth-iron-boron alloy powders useful in permanent magnets. The process generates rare earth-iron-boron alloy powders having large and uniform particle sizes with minimal contamination. The process entails the use of a seed alloy among the starting materials, the seed alloy having substantially the same composition as the rare earth-iron-boron alloy to be prepared.

Growing community of inventors

Hsinchu, Taiwan

Cheng Hua Lin