Genesis Photonics Inc.

Cheng-Hsueh Lu

Chi-Feng Huang

Hsin-Chiao Fang

Chi-Hao Cheng

Cheng-Hung Lin

Chih-Feng Lu

A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.

Semiconductor device containing nitrogen

A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlGaN, wherein 0&#x2264;x&#x2264;1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5&#xd7;10cmand carbon having a concentration greater than 5&#xd7;10cm. A chemical formula of the second AlGaN buffer layer is AlGaN, wherein 0&#x2264;y&#x2264;1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

Growing community of inventors

Tainan, Taiwan

Cheng-Hsueh Lu