Taiwan Semiconductor Manufacturing Comp. Ltd.

Epistar Corporation

Cheng-Hsiung Yen

Chii-Horng Li

Kei-Wei Chen

Pei-Ren Jeng

Ta-Chun Ma

Jung-Jen Chen

Chien-Chang Su

Yee-Chia Yeo

Ming-Hua Yu

Tsun-Kai Ko

Tsz-Mei Kwok

Yi-Fang Pai

Heng-Wen Ting

Hsin-Hsien Wu

Jung-Chi Tai

Jeng-Wei Yu

Tsung-Hsi Yang

Yen-Chih Chen

Yu-Yao Lin

Chien-Yuan Tseng

Chun-Ta Yu

Shih-Chun Ling

Jui-Hsuan Chen

Cheng-Po Chau

Pin-Ju Liang

Yi-Cheng Li

A method includes forming a gate stack on a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to form a recess, and forming a source/drain region starting from the recess. The formation of the source/drain region includes performing a first epitaxy process to grow a first semiconductor layer, wherein the first semiconductor layer has straight-and-vertical edges, and performing a second epitaxy process to grow a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of a same conductivity type.

Epitaxy regions with large landing areas for contact plugs

A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.

Semiconductor method and device

In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.

Semiconductor device and method

This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises AlGaN (0&#x3c;x&#x3c;1) and the second sub-layer has a surface comprising a structure of irregularly distributed holes.

Light-emitting diode

A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.

Light emitting device

Growing community of inventors

Hsinchu, Taiwan

Cheng-Hsiung Yen