Applied Materials, Inc.

Cheng-Hsiung Matt Tsai

Manjunatha P Koppa

Steven Victor Sansoni

Aravind Kamath

Karl M Brown

Ananthkrishna Jupudi

Bonnie T Chia

Tomoharu Matsushita

Wei W Wang

Muhammad M Rasheed

Kirankumar Neelasandra Savandaiah

Vineet Haresh Mehta

Jallepally Ravi

Semyon Sherstinsky

Shambhu Nath Roy

David T Or

Sarath Babu

Allen K Lau

Steve Sansoni

Manjunath H Venkataswamappa

Kai Liang Liew

John C Forster

Xianmin Tang

Anantha K Subramani

Rongjun Wang

Thomas B Brezoczky

Mingwei Zhu

Sriskantharajah Thirunavukarasu

Yueh Sheng Ow

Omkaram Nalamasu

Song-Moon Suh

Vivek Agrawal

Shreesha Y Rao

Preetham P Rao

Vinodh Ramachandran

Hiroyuki Takahama

Dinesh Saigal

Ribhu Gautam

Puneet Bajaj

David H Loo

Ross Marshall

Praburam Gopal Raja

Richard J Green

Vijay D Parkhe

Nag B Patibandla

Xi Chelsea Chen

Hari K Ponnekanti

Kadthala Ramaya Narendrnath

Xiaoxiong Yuan

Yu Wen Chang

Muhannad Mustafa

Hamid Tavassoli

Yuichi Wada

Glen T Mori

Govinda Raj

Chi Hong Ching

Lei Zhou

Vikash Banthia

David Gunther

Chang Ke

Robert Hirahara

Tuck Foong Koh

Mukund Sundararajan

Yuanhong Guo

Sheng Michael Guo

Prashant Agarwal

Robert Dinsmore

Chien-Shiung Tzou

Youqun Dong

Larry Frazier

Nag B Patibandia

Quancheng Gu

Xiaoxi Guo

David Langtry

Eiji Asahina

Nora Arellano

Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.

Reactive cleaning of substrate support

Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

Inline microwave batch degas chamber

Methods and apparatus for supporting a substrate are provided herein. In some embodiments, a substrate support to support a substrate having a given diameter includes: a base ring having an inner diameter less than the given diameter, the base ring having a support surface configured to contact a first surface of the substrate and to form a seal between the support surface and the first surface of the substrate, when disposed atop the base ring; and a clamp ring having an inner diameter less than the given diameter, wherein the clamp ring includes a contact surface proximate the inner diameter configured to contact an upper surface of the substrate, when present, and wherein the clamp ring and the base ring are further configured to provide a bias force toward each other to clamp the substrate in the substrate support.

Substrate support with edge seal

Substrate processing chambers with integrated shutter garage are provided herein. In some embodiments, a pre-clean substrate processing chamber may include a chamber body, wherein the chamber body includes a first side configured to be attached to mainframe substrate processing tool, and a second side disposed opposite the first side, a substrate support configured to support a substrate when disposed thereon, a shutter disk garage disposed on the second side of the process chamber, and a shutter disk assembly mechanism comprising a rotatable shaft, and a robot shutter arm coupled to the shaft, wherein the robot shutter arm includes a shutter disk assembly support section configured to support a shutter disk assembly, and wherein the shutter disk assembly mechanism is configured to move the robot shutter arm between a storage position within the shutter garage and a processing position within the process chamber over the substrate support.

Pre-clean chamber with integrated shutter garage

Process shield for a substrate processing chamber

Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.

Substrate position calibration for substrate supports in substrate processing systems

Deposition ring for a substrate processing chamber

Two-piece shutter disk assemblies for use in process chambers are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber includes an upper disk member having a top surface and a bottom surface, wherein a central alignment recess is formed in a center of the bottom surface, and a lower carrier member having a solid base having an upper support surface, wherein the upper support surface includes a first central self-centering feature disposed in the recess formed in the center of the bottom surface and an annular outer alignment feature that protrudes upward from a top surface of the lower carrier and forms a pocket, wherein the upper disk member is disposed in the pocket.

Two piece shutter disk assembly with self-centering feature

Embodiments of an electrostatic chuck are provided herein. In some embodiments an electrostatic chuck includes an electrode, a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils, and gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body.

Physical vapor deposition (PVD) electrostatic chuck with improved thermal coupling for temperature sensitive processes

Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

PVD buffer layers for LED fabrication

Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.

Method and apparatus for processing a substrate using non-contact temperature measurement

Methods and apparatus for detecting a shutter disk assembly in a process chamber using a number of sensors. A first, second, and third sensor in a shutter housing for a shutter disk assembly provide indications of a status of the shutter disk assembly. The indications are used in part to determine the operational status of the shutter disk assembly along with process information from a process controller. The operational status is then used to alter a process of the process chamber when necessary.

Methods and apparatus for shutter disk assembly detection

Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

High conductance process kit

Base plate for a processing chamber substrate support

Growing community of inventors

Cupertino, CA, United States of America

Cheng-Hsiung Matt Tsai