United Microelectronics Corp.

Other

Abatech Electronics Co., Ltd.

Cheng-Hsiung Chen

Yue-Shiun Lee

Po-Yu Yang

Mu-Kai Tsai

Tsz-Hui Kuo

Chang-Hung Chen

Wei-Chi Lee

Han-Tsun Wang

Guan-Shyan Lin

Mei-Ying Fan

Shih-Yin Hsiao

Kuo-Liang Yeh

Hsiang-Chih Yu

Yuan-Chang Liu

Jinn-Horng Lai

Chien-Tung Yue

Hsiu-Chin Chen

Shen-Yuan Chou

Fang-Yun Liu

Meng-Fan Wang

Chu-You Hsieh

Chin-Chou Yang

A semiconductor device includes a substrate, a first transistor disposed on the substrate, a second transistor in proximity to the first transistor on the substrate, at least one interlayer dielectric layer covering the first transistor and the second transistor, a first stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the first transistor, and a second stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the second transistor.

Semiconductor device

An inverter structure includes a first fin structure and a second fin structure respectively disposed within a P-type transistor region and an N-type transistor region on a substrate. Agate line is disposed on the substrate. A first end of the gate line is within the P-type transistor region, and a second end of the gate line is within the N-type transistor region. Two dummy gate lines are disposed at two sides of the gate line. Each dummy gate line has a third end within the P-type transistor region, and a fourth end within the N-type transistor region. A distance between the first end and the first fin structure is greater than a distance between the third end and the first fin structure. The distance between the second end and the second fin structure is smaller than a distance between the fourth end and the second fin structure.

Method of adjusting signal to noise ratio of SRAM and invertor structure

An inverter structure includes a first fin structure and a second fin structure respectively disposed within a P-type transistor region and an N-type transistor region on a substrate. A gate line is disposed on the substrate. A first end of the gate line is within the P-type transistor region, and a second end of the gate line is within the N-type transistor region. Two dummy gate lines are disposed at two sides of the gate line. Each dummy gate line has a third end within the P-type transistor region, and a fourth end within the N-type transistor region. A distance between the first end and the first fin structure is greater than a distance between the third end and the first fin structure. The distance between the second end and the second fin structure is smaller than a distance between the fourth end and the second fin structure.

The present invention provides a differential varactor device including a substrate having a first conductive type, a well having a second conductive type, five doped regions having the second conductive type, a first gate, a second gate, a third gate, and a fourth gate. The well is disposed in the substrate, and the doped regions are disposed in the well and arranged along a direction. The first gate, the second gate, the third gate and the fourth gate are respectively disposed on the well between any two of the adjacent doped regions, and are arranged sequentially along the direction.

Differential varactor device

An ultra-thin loudspeaker structure comprises an upper drum paper, a lower drum paper, and a steel sheet. The lower drum paper defines an opening at a center thereof and is integrally formed with a surrounding raised paper section near a periphery thereof. The upper drum paper defines an opening, corresponding to the opening of the lower drum paper, at a center thereof. The upper drum paper is located within the surrounding raised paper section and adhered to the lower drum paper by its periphery. The steel sheet is provided with a sound-making member stacked by a plurality of ceramic material layer, and is sandwiched between the drum papers. Accordingly, the steel sheet can facilitate spreading sound of high and medium frequency whereas the drum papers can facilitate spreading sound of low frequency, to achieve a better reproduction of sound.

Ultra-thin loudspeaker structure

A method of characterizing semiconductor device includes providing a silicon-on-insulator (SOI) substrate with at least a body-tied (BT) SOI device and a BT dummy device for measurement, respectively measuring tunneling currents (I) and scattering parameters (S-parameters) of the BT SOI device and the BT dummy device, subtracting Iof BT dummy device from that of the BT SOI device to obtain Iof a floating body (FB) SOI device, filtering characteristics of the BT dummy device out to extract S-parameters of the FB SOI device, and analyzing the S-parameters of the FB SOI device to obtain gate-related capacitances of the FB SOI device.

Method of characterizing a semiconductor device and semiconductor device

A radio frequency test key structure includes a substrate, a bottom metal layer and a top metal layer. A narrow testing region is defined on the substrate. The bottom metal layer is positioned on the substrate and in the narrow testing region, and including an opening to expose parts of a device under test. The top metal layer is a metal pad in a sheet form, positioned in the narrow testing region and on the bottom metal layer. At least two signal pad regions and at least two ground pad regions are defined in the top metal layer. The signal pad regions and the ground pad regions are arranged in one row, and the row is parallel to the narrow testing region. Accordingly, the radio frequency test key structure can be positioned in a scribe line, and get an accurate testing result.

Radio frequency test key structure

A mouse having a changeable pad is comprised of a case, at least one replacement board and a plurality of pads. The replacement board is installed in the bottom of the case. The pads are installed on both faces of the replacement board. When the pad on the first face of the replacement board becomes worn out, the replacement board can be turned over and the pad on the second face of the replacement board can be installed in the bottom of the case for increasing the pad's user life.

Mouse having a changeable pad

A method of manufacturing a resistor is provided. At first, a semiconductor layer including at least a high resistance region and a low resistance region is formed on a substrate. Following that, a first ion implantation process is performed to the entire surface of the semiconductor layer, and a second ion implantation process is performed to the portions of the semiconductor layer within a predetermined region, so that the semiconductor layer has a higher doping concentration within the predetermined region than in the other regions. Therein, the predetermined region overlaps the low resistance region, the junction between the low resistance region and the high resistance region, and the portions of the high resistance region adjacent to the junction between the low resistance region and the high resistance region.

Method for manufacturing a resistor

A resistor structure includes a substrate, a semiconductor layer positioned on the substrate, a salicide block positioned on portions of the surface of the semiconductor layer, and at least a salicide layer positioned on the portions of the surface of the semiconductor layer adjacent to the salicide block. The semiconductor layer has a predetermined region overlapping the salicide layer, the junction between the salicide layer and the salicide block, and the portions of the salicide block adjacent to the junction between the salicide layer and the salicide block. The semiconductor layer has a higher doping concentration within the predetermined region than in the other regions.

Resistor structure and method for manufacturing the same

Equivalent circuits and a simulation method for simulating an RF switch are disclosed. The equivalent circuits are a first equivalent circuit and a second equivalent circuit, and are formed by resistors, capacitors, and inductors. The method includes using the first equivalent circuit to simulate the switch at a turned-off state and using the second equivalent circuit to simulate the switch at a turned-on state.

Equivalent circuits and simulation method for an RF switch

A mixed mode device. A polysilicon layer is over a substrate having a well therein. A first metal layer is formed over the polysilicon layer. A second metal layer is formed over the first metal layer. A conductive type of the well and a conductive type of the substrate are oppositive. A part of the polysilicon layer is positioned over the well. Heavily doped regions are further formed in the well beside the polysilicon layer. The polysilicon layer is used as gates of MOS transistors, and the heavily doped regions are used as source/drain regions of the MOS transistors. The first metal layer over the gate has a finger structure which electrically couples with the drain regions of the MOS transistors. The second metal layer electrically couples with the source regions through vias.

Mixed mode device

A roller assembly for a Venetian blind includes a rotating rod which has a rectangular axial hole formed therethrough. A portion of a pull cord is wound on the rotating rod so as to move slats vertically. A movable member of a rectangular cross-section is engaged in the rotating rod and has a threaded axial hole formed therethrough. An elongated driving member has a shaft section of a rectangular cross-section engaged within the rectangular axial hole of the rotating rod, a driven wheel section secured to the shaft section, and a circular axial hole formed through the shaft section and the driven wheel section. A lift cord is disposed on the driven wheel section. A guide unit is mounted securely on a window frame and includes a threaded horizontal rod extending through the circular axial hole of the driving member and through the threaded hole of the movable member. Accordingly, when the lift cord is pulled, the driving member rotates the rotating rod so as to move the movable member on the threaded horizontal rod of the guide unit, thereby rotating and moving the rotating rod on the guide unit.

Roller assembly for venetian blind

A roller assembly includes an elongated casing with a shaft longitudinally provided within it. A U-shaped bracket with two opposed sides and a bottom connecting the two sides is fixed in the elongated casing. A threaded rod is sleeved on the shaft in such a way that it can rotate along with the shaft. A guiding block having a first face, a second face and an internally threaded through-hole is sleeved on the threaded rod. Each of the face have a guiding wheel. The block is sized and designed so as to sit flush on the U-shaped bracket and prevent the bracket from rotating with the threaded rod, but allowing instead the block to move axially along on the threaded rod. One end of a first string connects to one end of the threaded rod and winds on the same to a position adjacent to the first face whereat the first string is held straight between the guiding wheel on the first face and the threaded rod. A second string is also held straight between the guiding wheel on the second face of the block and the threaded rod in the same manner.

Roller assembly for a window blind

A venetian blind includes a superposed series of horizontal slats suspended one above another, a bottom rail disposed below the slats, and two angle-controlling devices disposed at two end portions of the series of slats. Each of the angle-controlling devices includes a rotatable pulley disposed above the slats and provided with an annular groove, two tilting cords respectively connected to two sides of each of the slats, and a coiled spring sleeved tightly on the pulley within the annular groove which has two ends to which the top ends of the tilting cords are respectively fastened. The bottom rail is attached to the bottom ends of the tilting cords. When the pulleys are rotated to a predetermined position, one end of each of the springs is moved radially outward due to the downward pull of the bottom rail, so that the springs are loosened from the pulleys.

Growing community of inventors

Taipei, Taiwan

Cheng-Hsiung Chen