Macronix International Co., Ltd.

Acer Peripherals, Inc.

Delta Electronics, Inc.

Mcneil Ab

Cheng-Hsien Lu

Yun-Yuan Wang

Ming-Hsiu Lee

Dai-Ying Lee

Feng-Min Lee

Po-Hao Tseng

Chien-Chung Chang

Ming-Liang Wei

Corrado Tasselli

Yu-Yang Lu

Sheng-Yan Hu

Chui-Chien Chiu

Chien-Yi Wu

Han-Chang Weng

Chun-Hao Hsu

A memory device and a computing method thereof are provided in the present disclosure. The computing method includes the following steps. A plurality of input-values of a model computation are respectively received through a plurality of first-word-lines of a memory array. Inverted logic values of the input-values are respectively received through a plurality of second-word-lines. The input-values are respectively received through a plurality of first-bit-lines. The inverted logic values are respectively received through a plurality of second-bit-lines. Logic XNOR operation is performed according to each of the input-values and each of the inverted values to obtain a first computation result, and multiplied with one of self-coefficients or one of mutual coefficients of the model computation to obtain a plurality of output-values. The output-values are outputted through a plurality of common-source-lines.

Memory device and computing method thereof

The disclosure provides an in-memory search (IMS) memory cell, an IMS method and an IMS memory device. The IMS method comprises: encoding a search data and a storage data by a first IMS encoding into a first IMS encoded search data and a first IMS encoded storage data; encoding the first IMS encoded search data by a second IMS encoding into a plurality of search voltages; encoding the first IMS encoded storage data by the second IMS encoding into a plurality of threshold voltages of a plurality of memory cells of a plurality IMS memory cells of the IMS memory device; and searching the IMS memory cells by the search voltages to generate a search result.

IMS memory cell, IMS method and IMS memory device

A semiconductor structure is provided. The semiconductor structure includes a substrate and a via structure. The via structure is through the substrate. The via structure includes a first conductive portion, a second conductive portion, a first barrier portion, a second barrier portion, and a third barrier portion. The first conductive portion has a ring-shaped cross section. The second conductive portion is disposed at an inner side of the first conductive portion. The second conductive portion has a ring-shaped cross section. The first barrier portion is disposed at an outer side of the first conductive portion. The second barrier portion is disposed between the first conductive portion and the second conductive portion. The third barrier portion is disposed at an inner side of the second conductive portion. At least one of the first barrier portion, the second barrier portion, or the third barrier portion includes an insulating 2D material.

Semiconductor structure and method for manufacturing having the conductive portions isolated from each other by an insulating 2D material

The application provides a memory device and an operation method thereof. The memory device includes: a memory array, for processing model computation having a plurality of input values and a plurality of interact coefficients; and at least one calculation unit. In receiving the input values, a first part and a second part of the memory cells generate a first part and a second part of the common source currents, respectively. The first part of the memory cells is electrically isolated from the second part of the memory cells based on a diagonal of the memory array. The at least one calculation unit calculates a first part and a second part of a local field energy of the model computation based on the first part and the second part of the common source currents.

A semiconductor structure is provided. The semiconductor structure comprises a substrate, a via, a liner layer, a barrier layer, and a conductor. The via penetrates through the substrate. The liner layer is formed on a sidewall of the via. The barrier layer is formed on the liner layer. The barrier layer comprises a conductive 2D material. The conductor fills a remaining space of the via.

Semiconductor structure and method for manufacturing the same

A cartridge assembly may be utilized in combination with an electronic nicotine delivery system for the safe, efficient and cost-effective means for delivering a controlled dose of nicotine to a user on demand. The cartridge assembly includes a reservoir with a material for holding liquid nicotine or a liquid nicotine solution and is constructed from a material that is chemically resistant to nicotine or nicotine solution. The cartridge assembly includes an anti-counterfeit feature to prevent use of an unauthorized cartridge in the electronic nicotine delivery system. The cartridge assembly also includes an anti-reuse feature that precludes reuse of the cartridge assembly once removed from the electronic nicotine delivery system. Essentially, the cartridge assembly is designed for a single use only.

Cartridge for electronic delivery system

A memory device, for executing an anneal computation with first state and a second state. The memory device includes a first memory array, a second memory array, a control circuit, a sensing circuit and a processing circuit. the control circuit selects a first horizontal row of memory units from the first memory array, and selects a second horizontal row of memory units from the second memory array. The sensing circuit computes a local energy value of the first state according to the current generated by the memory units of the first horizontal row, and computes a local energy value of the second state according to the current generated by the memory units of the second horizontal row. The processing circuit updates the first state and/or the second state according to the local energy value of the first state and the local energy value of the second state.

Memory device and operating method thereof

The centrifugal channel device includes a channel body, a collecting unit and a waste liquid tank. The channel body includes a first surface and a second surface relatively disposed. The channel body includes a sample inlet, a sample channel, an isolation tank, a reagent inlet, a reagent channel and a mixing channel. The sample inlet is disposed on the first surface. The sample channel is connected to the sample inlet. The isolation tank is adjacently disposed and communicates with the sample channel. The reagent inlet is disposed on the first surface. The reagent channel is connected to the reagent inlet. One end of the mixing channel is connected with the sample channel and the reagent channel. The collecting unit has an opening and an overflow hole. The opening communicates with another end of the mixing channel. The waste liquid tank communicates with the opening of the collecting unit.

Centrifugal channel device

This invention discloses a paper eject passageway auto-switching device, which is installed in an information processing machine, suitable for automatically switching between two eject passageways for paper sheets from the processing unit. The paper eject passageway auto-switching device includes: a first paper eject passageway and a second eject passageway. The first paper eject passageway has a first guide vane provided with a guide surface capable of guiding paper sheets from the processing unit to move along the first paper eject passageway, and a first outlet portion through which paper sheets leave the information processing machine. The second paper eject passageway has a branched opening having its width smaller than that of the first guide vane, a second guide vane, and a second outlet portion. The second guide vane has a guide surface capable of guiding paper sheets from the branched opening into the second paper eject passageway. Paper sheets leave the information processing machine through the second outlet portion. The branched opening is located on the guide surface of the first guide vane, paper sheets of widths larger than that of the branched opening are guided to enter the first paper eject passageway and paper sheets of widths smaller than that of the branched opening are guided to enter the second paper eject passageway.

Paper eject passageway auto-switching device

An image forming apparatus including a document-inlet, a multifunction opening, a document-outlet, a first document path and a second document path, is provided. The multifunction opening selectively functions as a document inlet or a document outlet. The first document path, responsive to the document fed in through the document-inlet, directs and drives the document from the document-inlet to the illumination/scan position, and, after the document is scanned, discharges the document to the multifunction opening. The second document path, responsive to the document fed in through the multifunction opening, directs and drives the document from the multifunction opening to the illumination/scan position, and, after the document is scanned, discharges the document to the document outlet. A section of the first document path and a section of the second document path overlaps to each other and defines an overlapping path.

Growing community of inventors

Taoyuan, Taiwan

Cheng-Hsien Lu