Abocom Systems, Inc.

Cheng-hsiao Chi

Cheng-Yi Ou

Chih-yuan Lin

Te-lieh Pan

An edge emitting laser (EEL) device includes a substrate, an n-type buffer layer, a first n-type cladding layer, a grating layer, a spacer layer, a lower confinement unit, an active layer, an upper confinement unit, a p-type cladding layer, a tunnel junction layer and a second n-type cladding layer sequentially arranged from bottom to top. The tunnel junction layer can stop an etching process from continuing to form the second n-type cladding layer into a predetermined ridge structure and converting a part of the p-type cladding layer into the n-type cladding layer to reduce series resistance of the EEL device. Therefore, the optical field and active layer tend to be coupled at the middle of the active layer, the lower half of the active layer can be utilized effectively, and the optical field is near to the grating layer to achieve better optical field/grating coupling efficiency and lower threshold current.

Edge emitting laser device

A vertical cavity surface emitting laser (VCSEL) device includes a substrate, a first mirror layer, a tunnel junction layer, a second mirror layer, an active layer, an oxide layer and a third mirror layer sequentially stacked with one another. The first mirror layer and the third mirror layer are N-type distributed Bragg reflectors (N-DBR), and the second mirror layer is P-type distributed Bragg reflector (P-DBR). The tunnel junction layer is provided for the VCSEL device to convert a part of the P-DBR into N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer is not used as current-limiting apertures. This disclosure further discloses a VCSEL device manufacturing method with the in-situ and one-time epitaxy features to avoid the risk of process variation caused by moving the device into and out from an epitaxial cavity.

Growing community of inventors

MIAOLI COUNTY, Taiwan

Cheng-hsiao Chi