Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng Hong Yang

Yen-Ming Chen

Feng-Cheng Yang

Shih-Hao Lin

Kuo-Feng Yu

Jian-Hao Chen

Hui-Chi Chen

Chia-Wei Chen

Shan-Mei Liao

Chih-Yu Hsu

Chi On Chui

Da-Yuan Lee

Cheng-Hao Hou

Tsung-Da Lin

Huang-Chin Chen

Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a first semiconductor stack and a second semiconductor stack over a substrate, wherein each of the first and second semiconductor stacks includes semiconductor layers stacked up and separated from each other; a dummy spacer between the first and second semiconductor stacks, wherein the dummy spacer contacts a first sidewall of each semiconductor layer of the first and second semiconductor stacks; and a gate structure wrapping a second sidewall, a top surface, and a bottom surface of each semiconductor layer of the first and second semiconductor stacks.

Post gate dielectric processing for semiconductor device fabrication

A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.

Integrated circuit device with improved reliability

Growing community of inventors

Hsinchu, Taiwan

Cheng Hong Yang