E Ink Holdings Inc.

Cheng-Hang Hsu

Ted-Hong Shinn

Hsiao-Wen Zan

Tzung-Wei Yu

Wei-Tsung Chen

Chuang-Chuang Tsai

Chia-Chun Yeh

Hsin-Tao Huang

Hsin-Fei Meng

Kuan-Yi Lin

Xue-Hung Tsai

Sheng-Fu Horng

Chao-Hsuan Chen

Hao-Wen Chang

Chia-I Liu

Chia-Wei Chou

Shao-Fu Peng

An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.

Active device

A display device includes a transparent cover, a photovoltaic conversion layer, a display module, and a planarization layer. The transparent cover has a visible region and an edge region that surrounds the visible region. The photovoltaic conversion layer is located on the edge region of the transparent cover. A stage difference is formed by the photovoltaic conversion layer and the visible region of the transparent cover. The display module is electrically connected to the photovoltaic conversion layer. The planarization layer is located between the display module and the photovoltaic conversion layer, and is located between the display module and the visible region of the transparent cover. The thickness of the planarization layer is greater than the stage difference.

Display device and manufacturing method thereof

A thin film transistor (TFT) structure includes a metal oxide semiconductor layer, a gate, a source, a drain, a gate insulation layer, and a passivation layer. The metal oxide semiconductor layer has a crystalline surface which is constituted by a plurality of grains separated from one another. An indium content of the grains accounts for at least 50% of all metal elementsof the crystalline surfaceof the metal oxide semiconductor layer. The gate is disposed on one side of the metal oxide semiconductor layer. The source and the drain are disposed on the other side of the metal oxide semiconductor layer. The gate insulation layer is disposed between the gate and the metal oxide semiconductor layer. The passivation layer is disposed on the gate insulation layer, and the crystalline surface of the metal oxide semiconductor layer is in direct contact with the gate insulation layer or the passivation layer.

Thin film transistor structure and method for manufacturing the same

A transistor including a substrate, a gate layer, a first insulating layer, an active layer, a source and a drain is provided. The gate layer is disposed on the first insulating layer, and has a plurality of first through holes. The first insulating layer covers the gate layer and a part of the substrate exposed by the first through holes, and forms a plurality of recesses respectively corresponding to the first through holes. The active layer is disposed on the first insulating layer, and has a plurality of second through holes. The second through holes communicate with the recesses, respectively. The source is disposed on a part of the active layer. The drain is disposed on another part of the active layer. A manufacturing method of the transistor is also provided.

Transistor including active layer having through holes and manufacturing method thereof

An organic light-emitting device includes a first electrode, a first light-emitting layer, a first low work function layer, a second low work function layer, a conductive etching-resistant layer, a first hole-injection layer, a second light-emitting layer, and a second electrode. The first light-emitting layer is disposed over the first electrode. The first low work function layer is disposed over the first light-emitting layer. The second low work function layer is disposed over the first low work function layer, and a work function of the second low work function layer is greater than a work function of the first low work function layer. The conductive etching-resistant layer is disposed over the second low work function layer. The first hole-injection layer is disposed over the conductive etching-resistant layer. The second light-emitting layer is disposed over the first hole-injection layer. The second electrode is disposed over the second light-emitting layer.

Organic light-emitting device

A method of forming a transistor includes: forming a stack structure including a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer on a substrate; patterning the first insulating layer, the second conductive layer, and the second insulating layer to form at least one opening passing through the first insulating layer, the second conductive layer, and the second insulating layer; forming a semiconductor layer over the second insulating layer and filling the opening; removing the portion of the semiconductor layer over the second insulating layer, in which the portion of the semiconductor layer filled in the opening constitutes at least one semiconductor channel; and forming a third conductive layer over the semiconductor channel.

Transistor and method of manufacturing the same

A vertical transistor and a manufacturing method thereof are provided herein. The manufacturing method includes forming a first patterned conductive layer on a substrate; forming a patterned metal oxide layer on the first patterned conductive layer, in which the patterned metal oxide layer includes a first patterned insulator layer, a second patterned insulator layer, and a second patterned conductive layer; forming a semiconductor layer; and forming a third patterned conductive layer. The first patterned insulator layer, the second patterned insulator layer, and the second patterned conductive layer are made by using a single metal oxide material. The oxygen concentration of the second patterned conductive layer is different from the oxygen concentrations of the first patterned insulator layer and the second patterned insulator layer.

Vertical transistor and manufacturing method thereof

A reflective display device includes a drive array substrate, an electrophoretic display film, a reflective optical film and a light source module. The electrophoretic display film is disposed on the drive array substrate and includes a plurality of display mediums. The reflective optical film is disposed on the electrophoretic display film. The light source module is disposed beside the reflective optical film. A light emitting from the light source module is reflected to the electrophoretic display film by the reflective optical film. The light source module includes a plurality of first-color light sources, a plurality of second-color light sources and a plurality of third-color light sources which are switched on in sequence. The reflective display device is in a color display mode when the light source module is turned on. The reflective display device is in a monochrome display mode when the light source module is turned off.

Reflective display device having the functions of both monochrome and color display modes and driving method thereof

A thin film transistor structure including a substrate, a gate, an oxide semiconductor layer, a gate insulation layer, a source, a drain, a silicon-containing light absorption layer and an insulation layer is provided. The gate insulation layer is disposed between the oxide semiconductor layer and the gate. The oxide semiconductor layer and the gate are stacked in a thickness direction. The source and the drain contact the oxide semiconductor layer. A portion of the oxide semiconductor layer without contacting the source and the drain defines a channel region located between the source and the drain. The oxide semiconductor layer is located between the substrate and the silicon-containing light absorption layer. The silicon-containing light absorption layer has a band gap smaller than 2.5 eV. The insulation layer is disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and in contact with the silicon-containing light absorption layer.

Thin film transistor having silicon-containing light absorption layer

A thin film transistor is provided. In this thin film transistor, the thickness of the gate is increased. Therefore, the source and drain of this thin film transistor can be disposed on the side wall of the gate to decrease the occupied area of the thin film transistor. An array substrate and a display device using the thin film transistor are also provided.

Display device, array substrate, and thin film transistor thereof

A thin film transistor structure is provided. The thin film transistor structure includes a first transistor having a first active layer, a second transistor having a second active layer, a first protection layer contacting the first active layer, and a second protection layer contacting the second active layer. The oxygen contents of the first and the second protection layers are controlled to affect the oxygen vacancy number of the first and the second active layers to satisfy the various electronic requirements of the first and the second transistors.

Thin film transistor structure and array substrate using the same

A thin film transistor (TFT) structure includes a metal oxide semiconductor layer, a gate, a source, a drain, a gate insulation layer, and a passivation layer. The metal oxide semiconductor layer has a crystalline surface which is constituted by a plurality of grains separated from one another. An indium content of the grains accounts for at least 50% of all metal elements of the metal oxide semiconductor layer. The gate is disposed on one side of the metal oxide semiconductor layer. The source and the drain are disposed on the other side of the metal oxide semiconductor layer. The gate insulation layer is disposed between the gate and the metal oxide semiconductor layer. The passivation layer is disposed on the gate insulation layer, and the crystalline surface of the metal oxide semiconductor layer is in direct contact with the gate insulation layer or the passivation layer.

A display device is provided, which includes a transparent substrate, an active device array, a solar cell structure and an electrophoretic display film. The transparent substrate has an upper surface and a lower surface opposite to each other. The active device array has a plurality of pixel structures, in which the pixel structures are disposed on the upper surface of the transparent substrate. The solar cell structure is directly disposed on the lower surface of the transparent substrate. The electrophoretic display film is disposed over the transparent substrate and includes a transparent protection film, an electrode layer and a plurality of display media, in which the electrode layer is disposed between the transparent protection film and the display media and the display media are located between the electrode layer and the active device array.

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Hsinchu, Taiwan

Cheng-Hang Hsu