Nan Ya Technology Corporation

Cheng-Han Yang

Jhen-Yu Tsai

Chin-Ling Huang

Yi-Ju Chen

The present application provides a method for preparing a memory device. The method includes: forming an active region in a substrate, wherein the active region has a linear top view shape; forming a gate structure on the substrate, wherein the gate structure has a linear portion intersected with a section of the active region away from end portions of the active region; forming a first insulating layer and a second insulating layer on the substrate, wherein the first insulating layer laterally surrounds the gate structure, and is covered by the second insulating layer; forming an opening penetrating through the first and second insulating layers and exposing a portion of the active region, wherein the opening is laterally spaced apart from the gate structure; and sequentially forming a dielectric layer and an electrode in the opening.

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Taipei, Taiwan

Cheng-Han Yang