Panasonic Corporation

Sumitomo Heavy Industries, Ltd.

Panaosnic Corporation

Cheng-Guo Jin

Bunji Mizuno

Yuichiro Sasaki

Tomohiro Okumura

Ichiro Nakayama

Hiroyuki Ito

Katsumi Okashita

Satoshi Maeshima

Hideki Tamura

Toshio Kudo

Hisataka Kanada

In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

Plasma doping method with gate shutter

In a plasma doping device according to the invention, a vacuum chamber () is evacuated with a turbo-molecular pump () as an exhaust device via a exhaust portwhile a predetermined gas is being introduced from a gas supply device () in order to maintain the inside of the vacuum chamber () to a predetermined pressure with a pressure regulating valve (). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source () to a coil () provided in the vicinity of a dielectric window () opposed to a sample electrode () to generate inductive-coupling plasma in the vacuum chamber (). A high-frequency power source () for supplying a high-frequency power to the sample electrode () is provided. Uniformity of processing is enhanced by driving a gate shutter () and covering a through gate ().

Plasma doping device with gate shutter

A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Method for introducing impurities and apparatus for introducing impurities

An impurity doping system is disclosed, which includes an impurity doping device for doping an impurity into a surface of a solid state base body, a measuring device for measuring an optical characteristic of an area into which the impurity is doped, and an annealing device for annealing the area into which the impurity is doped. The impurity doping system realizes an impurity doping not to bring about a rise of a substrate temperature, and measures optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized.

Impurity introducing apparatus having feedback mechanism using optical characteristics of impurity introducing region

It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. A prescribed gas is introduced into a vacuum containerfrom a gas supply apparatuswhile being exhausted by a turbomolecular pumpas an exhaust apparatus. The pressure in the vacuum containeris kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power sourceto a coildisposed close to a dielectric windowwhich is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. A high-frequency power sourcefor supplying high-frequency electric power to the sample electrodeis provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

Plasma doping method and apparatus

An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction.

Method for making junction and processed material formed using the same

A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitted from a laser diode pumped to solid-state laser to activate the impurities.

Process for fabricating semiconductor device

An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

Method and apparatus of fabricating semiconductor device

It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum containerfrom a gas supply apparatusthrough a gas inletwhile being exhausted by a turbomolecular pumpas an exhaust apparatus through an exhaust hole. The pressure in the vacuum containeris kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power sourceto a coildisposed close to a dielectric windowwhich is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. A high-frequency power sourcefor supplying high-frequency electric power to the sample electrodeis provided and functions as a voltage source for controlling the potential of the sample electrode. A surface crystal layer of a silicon waferwas rendered amorphous successfully by improving the structure of the sample-electrode

Plasma processing method and plasma processing apparatus

A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S), a step of removing a resist (S), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S); a step of anneal (S). The step of removing a resist (S) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NHOH, HOand HO into contact with the resist. The step of cleaning (S) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NHOH, HOand HO into contact with the principal face of the solid substrate. The step of removing a resist (S) and the step of cleaning (S) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NHOH, HOand HO into contact with the principal face of the solid substrate.

Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device

A subject of the present invention is to realize an impurity doping not to bring about a rise of a substrate temperature. Another subject of the present invention is to measure optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized. An impurity doping method, includes a step of doping an impurity into a surface of a solid state base body, a step of measuring an optical characteristic of an area into which the impurity is doped, a step of selecting annealing conditions based on a measurement result to meet the optical characteristic of the area into which the impurity is doped, and a step of annealing the area into which the impurity is doped, based on the selected annealing conditions.

Impurity introducing method using optical characteristics to determine annealing conditions

Method for introduction impurities and apparatus for introducing impurities

It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

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Osaka, Japan

Cheng-Guo Jin