Ememory Technology Inc.

Cheng-Da Huang

Chun-Hung Lin

Chih-Wei Chen

Chih-Chun Chen

Chieh-Tse Lee

Yu-Ping Huang

Chun-Hung Lu

Ming-Shan Lo

Jen-Yu Peng

Yi-Hung Li

Chien-Han Wu

Po-Ping Wang

Ting-Yang Yen

A selection circuit includes a main selection circuit and an auxiliary selection circuit. When a first voltage and a second voltage are different, the main selection circuit selects a higher one of the first voltage and the second voltage as an output voltage. When the first voltage and the second voltage are equal, the auxiliary selection circuit generates the output voltage according to the first voltage and the second voltage.

PMOS voltage selection circuit with an auxiliary selection circuit to prevent a floating output

When a driving circuit of an anti-fuse memory device programs a selected anti-fuse memory cell, voltage differences between unselected bit lines and unselected anti-fuse control lines would be eliminated or decreased to an acceptable value by floating unselected anti-fuse control lines or by applying a second control line voltage to the unselected anti-fuse control lines. Leakage currents flowing from unselected bit lines through ruptured anti-fuse transistors of the anti-fuse memory device to the unselected anti-fuse control lines would be decreased or eliminated, and program disturbance would be avoided.

Anti-fuse memory device, memory array, and programming method of an anti-fuse memory device for preventing leakage current and program disturbance

A reference voltage generator includes an output terminal, a current source, a reference circuit, a protection circuit, and a control circuit. The output terminal outputs a reference voltage. The current source is coupled to the output terminal, and generates a reference current. The reference circuit is coupled to the output terminal, and generates a reference voltage according to the reference current. The protection circuit is coupled to the output terminal, and adjusts a voltage of the output terminal to an operating voltage. The control circuit is coupled to the reference circuit and the protection circuit. The control circuit controls the reference circuit and the protection circuit according to a start signal.

Reference voltage generator capable of reducing hot carrier stress

A non-volatile memory includes a memory cell array, an amplifying circuit and a first multiplexer. The memory cell array includes m&#xd7;n memory cells. The memory cell array is connected with a control line, m word lines and n local bit lines, wherein m and n are positive integers. The amplifying circuit includes n sensing elements. The n sensing elements are respectively connected between the n local bit lines and n read bit lines. The first multiplexer is connected with the n local bit lines and the n read bit lines. According to a first select signal, the first multiplexer selects one of the n local bit lines to be connected with a first main bit line and selects one of the n read bit lines to be connected with a first main read bit line.

Non-volatile memory and memory sector thereof

A memory system includes a plurality of memory cells. A memory cell includes an anti-fuse transistor, a first select unit, and a second select unit. The anti-fuse transistor has a first terminal, a second terminal, and a control terminal coupled to an anti-fuse control line. The first select unit is coupled to the first terminal of the anti-fuse transistor, a first bit line, and an odd word line. The second select unit is coupled to the second terminal of the anti-fuse transistor, a second bit line, and an even word line. During a pre-screen operation of the memory cell, the odd word line and the even word line are at different voltages.

Memory system capable of pre-screening internal transistors

A random bit cell includes a random bit cell. The random bit cell includes a volatile memory unit, a first non-volatile memory unit, a second non-volatile memory unit, a first select transistor, and a second select transistor. The first non-volatile memory unit is coupled to a first data terminal of the volatile memory unit, and the second non-volatile memory unit is coupled to a second data terminal of the volatile memory unit. The first select transistor has a first terminal coupled to the first data terminal of the volatile memory unit, a second terminal coupled to a first bit line, and a control terminal coupled to a word line. The second select transistor has a first terminal coupled to the second data terminal of the volatile memory unit, a second terminal coupled to a second bit line, and a control terminal coupled to a word line.

Random bit cell with memory units

A sensing circuit includes a sensing stage. The sensing stage includes a voltage clamp, a P-type transistor and an N-type transistor. The voltage clamp receives a first power supply voltage and generates a second power supply voltage. The source terminal of the P-type transistor receives the second power supply voltage. The gate terminal of the P-type transistor receives a cell current from a selected circuit of a non-volatile memory. The drain terminal of the N-type transistor is connected with the drain terminal of the P-type transistor. The gate terminal of the N-type transistor receives a bias voltage. The source terminal of the N-type transistor receives a ground voltage. In a sensing period, the second power supply voltage from the voltage clamp is fixed and lower than the first power supply voltage.

Sensing circuit with voltage clamp for non-volatile memory

A non-volatile memory including memory cells is provided. Each of the memory cells includes a substrate, a floating gate structure, a select gate structure, and a first doped region. The floating gate structure is disposed on the substrate. The select gate structure is disposed on the substrate and located at one side of the floating gate structure. The first doped region is disposed in the substrate at another side of the floating gate structure. The first doped regions between two adjacent memory cells are adjacent to one another and separated from one another.

Non-volatile memory

A power-up sequence protection circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. First terminals of the first transistor, the second transistor, and the fourth transistor are coupled for receiving a program voltage. A control terminal of the third transistor is used for receiving a device voltage. A second terminal of the fourth transistor is used for outputting the program voltage when the fourth transistor is turned on. When the program voltage is unexpectedly powered up while the device voltage is not powered up, the first transistor is turned on, the second transistor is turned off, and the fourth transistor is turned off so as to block the program voltage outputted from the second terminal of the fourth transistor.

Power-up sequence protection circuit for avoiding unexpected power-up voltage

A self-timed reset pulse generator includes a flip-flop, a tracking block, and a tracking circuit. The flip-flop receives an input signal and a feedback signal and outputting a reset signal. The tracking block has replicating cells coupled in series and replicates a structure in an external device. The tracking block has a first terminal and a second terminal. The first terminal and the second terminal are taking from the tracking block at a same location or two different locations. The tracking circuit unit receives the reset signal and receives the first terminal and the second terminal for respectively discharging the tracking block at the first terminal and sensing a voltage level at the second terminal as triggered by the reset signal. A track-out signal serving as the feed back signal is output to the flip-flop when the voltage level is less than or equal to a threshold.

Self-timed reset pulse generator and memory device with self-timed reset pulse generator

The invention provides a non-volatile memory cell structure and non-volatile memory apparatus using the same. The non-volatile memory cell structure includes a substrate, first to three wells and first to three transistors. The first to three wells are disposed in the substrate, and the first to three transistors are respectively forming on the first to three wells. The first to third transistors are coupled in series. Wherein, a control end of the first transistor is floated, a control end of the second transistor receives a bias voltage, and a control end of the third transistor is coupled to a word line signal. Moreover, the third well and the second cell are in same type, and the type of the first well is complementary to a type of the third well.

Non-volatile memory cell structure and non-volatile memory apparatus using the same

A sensing apparatus and data sensing method are provided. The sensing apparatus includes an initial circuit, a reference current generator and a sensing circuit. The initial circuit discharges a sensing end to a reference ground during a discharge period, and pre-charges the sensing end to a preset voltage level during a pre-charge period according to an output signal. The reference current generator draws a reference current from the sensing end. The sensing circuit senses a voltage level on the sensing end to generate the output signal. Wherein, the sensing end receives a cell current from a memory cell, and the pre-charge period is after the discharge period.

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Hsinchu County, Taiwan

Cheng-Da Huang