Precision Instrument Development Center National Science Council

National Science Council

Cheng-Chung Jaing

Jyh-Shin Chen

Jeng-Jiing Sheu

Jen-Inn Chyi

Chuen-Horng Tsai

Jiann-Shiun Kao

Ing-Jer Ho

Long-Sheng Liao

Hsiang-Ming Tseng

Pey-Shiun Yeh

Py-Shiun Yeh

Ho-Yen Hsiao

Ming-Hwu Cheng

Cheng-Chung Lee

Ming-Chih Lee

Chuen-Lin Tien

A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate &lsqb;(Ba,Sr)TiO &rsqb; film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Capacitor containing amorphous and polycrystalline ferroelectric films and fabrication method therefor, and method for forming amorphous ferroelectric film

Zincselenide (ZnSe) thin films were grown on quartz glass and GaAs(100) substrates by continuous wave (CW) CO laser with ion beam assisted deposition. The ZnSe thin films are applied for multilayer anti-reflection coatings and blue light emitting devices. There are advantages to this technique over the Ion-Beam coating, MBE, MOCVD and PLD methods for fabricating layered semiconductors. It is cheaper and safer than Ion-Beam coating, MBE, MOCVD and others. It is cheaper and safer to heat the target locally by using a continuous wave laser so that contaminations and heat radiation are reduced. It is also cheaper and safer to avoid the splash of PLD.

Method for preparing ZnSe thin films by ion-assisted continuous wave CO2 laser deposition

This invention discloses an in-situ monitoring method on the layer uniformity of sputter coatings in a vacuum chamber based on deconvolution of measuring plasma emission spectra. The method of the present invention started from an Ar-normalized Sr intensity distribution derived from deconvoluting the plasma spectra by using Abel inversion method, which was considered as the spatial distribution of the sputtering mass of the source target. The thickness profile on the substrate was then calculated with n-th power of cosine law model. It was observed good agreement between the calculated thickness profile based on spectroscopic measurement and experimental observation. The film uniformity for the same sputter conditions can be monitored by comparing in-situ measurement of Ar-normalized Sr intensity distribution with the standard curve, or by directly calculating thickness distribution on the substrates.

Method for in-situ monitoring layer uniformity of sputter coating based on intensity distribution of plasma spectrum

Method for measuring a thermal expansion coefficient of a thin film by using phase shifting interferometry

A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate &lsqb;(Ba,Sr)TiO,&rsqb; film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO,film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Method for fabricating capacitor containing amorphous and polycrystalline ferroelectric films and method for forming amorphous ferroelectric film

Growing community of inventors

Hsinchu, Taiwan

Cheng-Chung Jaing