Industrial Technology Research Institute

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Elan Microelectronics Corporation

Toppoly Optoelectronics Corporation

Quanta Display Inc.

Taiwan Tft Lcd Association

Cheng-Chung Chen

Chi-Shen Lee

Chai-Yuan Sheu

Chi-Lin Chen

Yu-chi Lee

Shuo-Wei Liang

Chien-Wei Wu

Chia-Hsiang Chen

Yu-Chang Sun

Yi-Hsun Huang

Te-Ming Chu

Cheng-Hsing Chen

Chun-Ping Hu

Chien-Wen Tsi

Yu-Ching Lee

Chih-Jen Hu

Chun-Yao Huang

Cheng-Hung Tsai

Shih-Ming Wang

Yung-Fu Wu

Chen-Ming Chen

Fang-Tsun Chu

Keh-Long Hwu

Yu-Wu Wang

Huai-Yuan Tseng

Yu-Cheng Hsu

Chung-Chi Lai

Chun-Yau Huang

Yong-Fu Wu

Chwan-Gwo Chyau

In a method of fabricating a flexible display panel, a rigid substrate is provided. A flexible substrate having a first surface and a second surface opposite to the first surface is provided. A plurality of releasing-regions are formed on the first surface, and bonding strength of an area outside the releasing-regions is greater than bonding strength of the releasing-regions. An adhesive layer is formed between the rigid substrate and the first surface of the flexible substrate. A plurality of display units are formed on the second surface, and each of the display units is located over one of the releasing-regions, respectively. The flexible substrate is patterned to obtain a plurality of flexible carriers, and each of the flexible carriers carries one of the display units, respectively. The flexible carriers and the adhesive layer are de-bonded.

Flexible display panel and method of fabricating the same

A multi-frequency and multi-mode power amplifier is provided. The amplifier has a carrier power amplifier and a peaking power amplifier. The carrier power amplifier receives a first signal and outputs a first amplified signal, in which a first transistor size adjusting unit is included to adjust an equivalent transistor size based on a mode indication signal. The peaking power amplifier receives a second signal and outputs a second amplified signal, in which a second transistor size adjusting unit is included to adjust an equivalent transistor size based on the mode indication signal.

Power amplifier circuit for multi-frequencies and multi-modes and method for operating the same

A transformer and a structure thereof and a power amplifier are provided. The transformer includes a first inductor to a fourth inductor, a first capacitor, and a second capacitor. A first terminal of the first inductor receives a first signal. A first terminal of the second inductor is coupled to the first terminal of the first inductor. A first terminal of the third inductor receives a second signal, and a second terminal of the third inductor is coupled to a second terminal of the first inductor. A first terminal of the fourth inductor is coupled to the first terminal of the third inductor. The first capacitor is coupled between the first terminal of the first inductor and the first terminal of the third inductor. The second capacitor is coupled between a second terminal of the second inductor and a second terminal of the forth inductor.

Transformer and structure thereof and power amplifier

A method for electroplating low-resistance metal wire for resolving the problem to fabricate the metal wire on large-area substrate through the technology of photolithographing and etching in the prior art. Then the invention improves the RC-delay characteristic of circuit on large-area substrate and reduces the number of masks for processing of a structure of gate overlap lightly-doped drain (source) (GOLDD).

Method for electroplating metal wire

A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

Manufacturing method for a TFT electrode for preventing metal layer diffusion

A bumping process comprises forming a passivation layer having a planarized surface covering a pad on a substrate, forming a hole penetrating through the passivation layer to expose a contact surface of the pad, and forming a bump on the contact surface and planarized surface. The planarized surface will provide a larger effective area for pressing, thereby minimizing the pad, enhancing the mechanical strength at the peripheral of the pad, providing more selection flexibility for anisotropic conductive film, reducing the possibilities of short circuit and current leakage within the bump gap, and increasing the yield of the pressing process and the conductive quality of the bump.

Bumping process and bump structure

A switchable dual-band filter comprises first and second switchable resonators, a coupling structure having two ends respectively connecting the first and the second switchable resonators, an input impedance conversion circuit connecting an input terminal and the first resonator, and an output impedance conversion circuit connecting an output terminal and the second resonator. The coupling structure couples the first resonator to the second resonator, and vice versa. The input/output impedance conversion circuit converts the impedance on the input/output terminal into two distinct impedances that correspond to a first and a second operating frequency. The filter is simple in structure, occupies a smaller circuit area, and is cost-effective in manufacturing. The impedance at both operating passbands can also be matched properly.

Switchable dual-band filter

A method of manufacturing a TFT array panel for a LCD disclosers that the gate electrode wiring, transparent conducting electrode, and the first electrode of the storage capacity are formed while the first mask is processing. Then, the selective deposition method is used to process the growth of the first metal wiring. This, therefore, can reduce the numbers of the mask processes. Further, the metal deposition with photo-resist lift-off step is used to implement the layout of the second metal wiring for the consequent transmission lines in the manufacturing process. Finally, the process of the passivation layer deposition is used to implement associated circuits of a TFT array panel for a LCD. The TFT array panel for a LCD for manufacturing circuits can simplify the manufacturing process and reduce the cost.

Method of manufacturing a TFT array panel for a LCD

A dual-band bandpass filter having a first pass band and a second pass band respectively corresponding to a first frequency and a second frequency. The filter includes a first pair of resonators, a second pair of resonators and a first coupling element. The first pair of resonators includes a first resonator and a second resonator, which share a first grounding transmission line and are grounded through the first grounding transmission line to generate coupling. The second pair of resonators includes a third resonator and a fourth resonator, which share a second grounding transmission line and are grounded through the second grounding transmission line to generate coupling. The first coupling element connected between the first and second pairs of resonators makes the first and second pairs of resonators produce coupling such that the dual-band bandpass filter has the first and second pass bands.

Dual-band bandpass filter

A method of fabricating a thin film transistor (TFT) array involves ion replacement by oxidation-reduction processes for implementing the metal wiring layout of TFT-LCDs. This can overcome metal etching difficulties and achieve automatic alignment. The method of the invention replaces traditional lithographic etching techniciues.

Method of fabricating thin film transistor TFT array

The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor

A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.

Thin film transistor structure for a field emission display and the method for making the same

Growing community of inventors

Hsinchu, Taiwan

Cheng-Chung Chen