Industrial Technology Research Institute

Cheng-Chou Wong

Yuan-Chang Fann

Jenn-Dong Hwang

Jen-Dong Hwang

Sheng-Fa Yeh

Yu-Min Peng

Chun-Mu Chen

Bing-Ming Lin

Chin-Chuan Chang

Hsien-Lin Hu

Hsin-Hwa Chen

Cheng-Chuan Wang

Chia-Ying Yen

Chih-Tsung Tu

An electric conduction heat dissipation substrate includes a ceramic substrate, and a seed layer, and a buffering material layer and a copper circuit layer formed thereon in order. The buffering material layer has a coefficient of thermal expansion between those of the ceramic substrate and the copper circuit layer. Moreover, the buffering material layer is composed of alloy material and ceramic material or composed of metal material and ceramic material.

Electric conductive heat dissipation substrate

A protection structure for preventing thermal dissipation and thermal runaway diffusion in battery system is provided. The protection structure includes a battery module casing and at least one composite heat conduction plate. There is a plurality of unit cells disposed in the battery module casing. The composite heat conduction plate is located within the battery module casing, contacted with the battery module casing, and sandwiched between at least two of the unit cells as a heat transmission medium between the cells and the casing to control heat transmission among the cells. The composite heat conduction plate is a multilayer anisotropic heat conduction structure constituted by at least one heat conduction layer and at least one heat insulation layer.

Protection structure forthermal dissipation and preventing thermal runaway diffusion in battery system

The invention provides a metal thermal interface material (TIM) with through-holes in its body and/or zigzags or wave shapes on its border, which is suitable for use at thermal interfaces of a thermal conduction path from an integrated circuit die to its associated heat sink in a packaged microelectronic component. The invention also includes a thermal module and a packaged microelectronic component including the metal thermal interface material.

Metal thermal interface material and thermal module and packaged microelectronic component containing the material

A melting temperature adjustable metal thermal interface material (TIM) and a packaged semiconductor including thereof are provided. The metal TIM includes about 20-98 wt % of In, about 0.03-4 wt % of Ga, and at least one element of Bi, Sn, Ag and Zn. The metal TIM has an initial melting temperature between about 60-144&#xb0; C.

Melting temperature adjustable metal thermal interface materials and packaged semiconductors including thereof

A melting temperature adjustable metal thermal interface material (TIM) is provided. The metal TIM includes In, Bi, Sn, and Ga. A content of Ga ranges from 0.01 wt % to 3 wt %. The metal TIM has an initial melting temperature lower than 60&#xb0; C. and has no element hazardous to the environment.

Melting temperature adjustable metal thermal interface materials and application thereof

Growing community of inventors

Hsinchu County, Taiwan

Cheng-Chou Wong