Freescale Semiconductor,inc.

Cheng Choi Yong

Kevin John Hess

James W Miller

Susan H Downey

Lan Chu Tan

Chu-Chung Lee

Wai Yew Lo

Kong Bee Tiu

Fuaida Harun

Boh Kid Wong

A method of attaching bond wires to bond pads on an active surface of a semiconductor die, where the bond pads are disposed along four side edges of the die, and have aluminum top layers. The method includes attaching first bond wires to first bond pads on first and second opposing sides of the die using a first group of settings and attaching second bond wires to the bond pads on third and fourth sides of the die that oppose each other and are adjacent the first and second sides, using a second group of settings. The first and second groups of settings include first and second scrub settings that are different from each other. Employing two separate scrub settings allows for reduced splashing of the aluminum cap layer on the die pad from splashing onto passivation edges of the bond pads.

Wire bonding method employing two scrub settings

A method provides an interconnect structure having enhanced structural support when underlying functional metal layers are insulated with a low modulus dielectric. A first metal layer having a plurality of openings overlies the substrate. A first electrically insulating layer overlies the first metal layer. A second metal layer overlies the first electrically insulating layer, the second metal layer having a plurality of openings. An interconnect pad that defines an interconnect pad area overlies the second metal layer. At least a certain amount of the openings in the two metal layers are aligned to improve structural strength of the interconnect structure. The amount of alignment may differ depending upon the application and materials used. A bond wire connection or conductive bump may be used with the interconnect structure.

Method and apparatus for providing structural support for interconnect pad while allowing signal conductance

A method of forming a substrateless semiconductor package () includes forming a carrier () on a base plate () and attaching an integrated circuit (IC) die () to the carrier (). The IC die () then is electrically connected to the carrier (). A molding operation is performed to encapsulate the IC die (), the electrical connections () and the carrier (). Thereafter, the base plate () is removed.

Method of forming a substrateless semiconductor package

An integrated circuit die () has a copper contact (), which, upon exposure to the ambient air, forms a native copper oxide. An organic material is applied to the copper contact which reacts with the native copper oxide to form an organic coating () on the copper contact in order to prevent further copper oxidation. In this manner, further processing at higher temperatures, such as those greater than 100 degrees Celsius, is not inhibited by excessive copper oxidation. For example, due to the organic coating, the high temperature of the wire bond process does not result in excessive oxidation which would prevent reliable wire bonding. Thus, the formation of the organic coating allows for a reliable and thermal resistance wire bond (). Alternatively, the organic coating can be formed over exposed copper at any time during the formation of the integrated circuit die to prevent or limit the formation of copper oxidation.

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Kuala Lumpur, Malaysia

Cheng Choi Yong