Au Optronics Corporation

Cheng-Chieh Chang

Wen-Wei Yang

Tsung-Yi Lin

Pin-Miao Liu

Cheng-Yeh Tsai

Tsung-Tien Wu

Chen-Chi Lin

Ting-Wei Guo

Yi-Cheng Liu

Fang-Cheng Yu

Ho-Cheng Lee

Kang-Hung Liu

A light emitting device including a substrate, a first pad, a second pad, a light emitting diode, a first connection structure, a second connection structure, and a patterned adhesive layer and a method for manufacturing the same are provided. The first pad and the second pad are located on the substrate. The light emitting diode includes a first semiconductor layer, a second semiconductor layer overlapping the first semiconductor layer, a first electrode and a second electrode. The first electrode and the second electrode are respectively connected to the first semiconductor layer and the second semiconductor layer. The first connection structure electrically connects the first electrode to the first pad. The second connection structure electrically connects the second electrode to the second pad. The patterned adhesive layer is located between the substrate and the light emitting diode and does not contact the first connection structure and the second connection structure.

Light emitting device and method for manufacturing the same

A bi-directional optical module includes a substrate, at least one first light-emitting diode (LED), and at least one second LED. The first LED is disposed on a surface of the substrate. The first LED has a first reflection surface and a first light-outlet surface that are opposite to each other, and the first light-outlet surface is away from the substrate relative to the first reflection surface. The second LED is disposed on the same surface of the substrate. The second LED has a second reflection surface and a second light-outlet surface that are opposite to each other, and the second light-outlet surface is close to the substrate relative to the second reflection surface. The substrate has at least one light-transparent area that is not occupied by the first LED and the second LED.

Bi-directional optical module and transparent display apparatus using the same

A light emitting diode (LED) display panel includes a back plate and a pixel structure, which includes multiple pixels. Each pixel includes a reflector structure and two LEDs emitting light of a same color, all disposed on the back plate. The reflector structure of each pixel has a first reflective bank structure and a second reflective bank structure. The first reflective bank structure has a first bank opening. The second reflective bank structure has a second bank opening. The two LEDs are disposed within the first and second bank openings. The first bank opening has a first shape, and the second bank opening has a second shape, which is a mirror shape or a 180&#xb0; symmetrical shape of the first shape. For each of the pixels, the first shape is a polygonal shape, and at least two corners of the first shape have an included angle less than 90&#xb0;.

Pixel arrangement and reflector structure of LED display and method of forming same

A pixel structure includes at least one sub-pixel. The sub-pixel includes a substrate, a first micro light-emitting element, a repair micro light-emitting element, a first connecting line, a second connecting line, and a bridge pattern. The first micro light-emitting element is disposed on the substrate. The repair micro light-emitting element is disposed on the first micro light-emitting element and partially overlaps the first micro light-emitting element in a vertical direction of the substrate. The first connecting line is electrically connected to a first electrode of the first micro light-emitting element and a third semiconductor layer of the repair micro light-emitting element. The second connecting line is electrically connected to a second electrode of the first micro light-emitting element. The bridge pattern is located between the first micro light-emitting element and the repair micro light-emitting element, and is electrically connected to the second electrode and a fourth semiconductor layer of the repair micro light-emitting element.

Pixel structure

A device substrate includes a receiving substrate, a micro light emitting element, a first wire, and a second wire is provided. The micro light emitting element is disposed on the receiving substrate. The micro light emitting element includes a first type semiconductor layer and a second type semiconductor layer. The first type semiconductor layer is disposed on the receiving substrate and has a first wire connecting surface away from the receiving substrate. The second type semiconductor layer is disposed on a part of the first type semiconductor layer and has a second wire connection surface away from the receiving substrate. The first wire is disposed on the first wire connection surface. The second wire is disposed on the second wire connection surface. A projection range of the first wire perpendicularly projected on the micro light emitting element and a projection range of the second wire perpendicularly projected on the micro light emitting element are at least partially overlap.

Device substrate

A micro-light-emitting diode device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer has a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer. The second semiconductor layer and the active layer have an interface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-light-emitting diode device. A distance between the light-exiting surface and the interface decreases from a central axis of the second semiconductor layer to an edge of the second semiconductor layer, so as to provide a focusing effect for the light by the light-exiting surface.

Micro-light-emitting diode device

A light emitting device including a first semiconductor layer, a light emitting layer, a second semiconductor layer, a first electrode, and a second electrode is provided. The light emitting layer is deposited between the first and the second semiconductor layers. The first semiconductor layer, the light emitting layer and the second semiconductor layer form a stepped structure including a first electrode connection surface, a second electrode connection surface, and a connection portion. The first electrode connection surface is located on the first semiconductor layer. The second electrode connection surface is located on the second semiconductor layer. The connection portion connects the first and the second electrode connection surfaces. The connection portion includes a first surface, a second surface, and a third surface. A first corner s formed between the first and the second surfaces. A second corner is formed between the second and the third surfaces.

Light emitting device with a stepped structure

A light emitting device includes a substrate, a light emitting chip, a first electrode, and a second electrode. The light emitting chip includes a first and a second semiconductor layers. The first semiconductor layer is disposed on the substrate. The second semiconductor layer is stacked on the first semiconductor layer and forms a light emitting junction with the first semiconductor layer. The first electrode connects to the first semiconductor layer and the second electrode connects to the second semiconductor layer. The light emitting device may further include a transparent layer that is disposed on the substrate and surrounds and contacts the lateral of the light emitting chip. A refraction index of the transparent layer is between a refraction index of the light emitting chip and that of a vacuum. The first electrode may penetrate the second semiconductor layer to connect to the first semiconductor.

Light emitting device with a light emitting junction formed by stacking semiconductor layers

A pixel structure includes a plurality of sub-pixels. Each of the sub-pixels includes a first light-emitting diode (LED) and a second LED. The first LED is configured to emit a first color light. The second LED is configured to emit a second color light. Each of the first LED and the second LED includes an anode and a cathode. The anode of the first LED and the anode of the second LED are coupled to a same signal line. The cathode of the first LED and the cathode of the second LED are coupled to different signal lines.

Pixel circuit structure and method for driving the same

A micro light emitting diode structure includes a light emitting stacking layer, an insulating layer, a first electrode and a second electrode. The light emitting stacking layer includes a truncated quadrangular pyramid, wherein the truncated quadrangular pyramid includes a first sidewall, a second sidewall, a third sidewall and a fourth sidewall, and a top portion of the truncated quadrangular pyramid has a recess. The insulating layer covers the first sidewall, the third sidewall and a part of the top portion of the light emitting stacking layer. The first electrode covers the first sidewall of the light emitting stacking layer, a part of the insulating layer on the top portion, and the bottom surface of the recess. The second electrode covers the third sidewall of the light emitting stacking layer, and another part of the insulating layer on the top portion and contacts the light emitting stacking layer through an opening of the insulating layer.

Micro light emitting diode structure, pixel unit, and light emitting diode display panel

A micro-light-emitting diode (micro-LED) device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer includes a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer disposed on the active layer includes a second bottom surface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-LED device. The second semiconductor layer has different thicknesses, in which a minimum thickness of the second semiconductor layer is located at an edge or at least one side of the second semiconductor layer. Vertical-projection zones of the first semiconductor layer, the active layer, and the second semiconductor layer on the first bottom surface are substantially the same.

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Hsin-Chu, Taiwan

Cheng-Chieh Chang