Innolux Corporation

Cheng-Chi Wang

Chin-Lung Ting

Yeong-E Chen

Wen-Hsiang Liao

Yi-Hung Lin

Chia-Chieh Fan

Cheng-En Cheng

Ker-Yih Kao

Kuo-Jung Fan

Heng-Shen Yeh

Hsueh-Hsuan Chou

Kuan-Jen Wang

Li-Wei Sung

I-Yin Li

Chia-Chi Ho

Kuang-Ming Fan

Chuan-Ming Yeh

Hung-Sheng Chou

Jui-Jen Yueh

Chung-Kuang Wei

Ming-Tsang Wu

Ming-Yen Weng

Chia-Lin Yang

Chien-Feng Li

Ming-Hsien Shih

Tsutomu Shinozaki

Kuan-Feng Lee

Yu-Ting Liu

Hsu-Kuan Hsu

Liang-Lu Chen

Huei-Ying Chen

Chien-Hsing Lee

Fuh-Tsang Wu

Yu-Jen Chang

Tzu-Yen Chiu

Cheng-I Wu

Chin-Ming Huang

Kuo-Sheng Yeh

Yi-Chen Chou

Cheng-Hsien Ho

Chun-Hung Chen

Ju-Li Wang

Te-Hsun Lin

Yung-Feng Chen

Mei-Yen Chen

Chien-Chang Lu

A semiconductor package device is provided. The semiconductor package device includes a chip and a redistribution layer disposed on the chip and electrically connected to the chip. The redistribution layer includes a plurality of first metal lines and a plurality of second metal lines, wherein at least one of the second metal lines is disposed between two adjacent first metal lines. The included angle between the at least one of the second metal lines and the two adjacent first metal lines is greater than or equal to 0 degrees and less than or equal to 10 degrees. The first width of one of the two adjacent first metal lines is greater than the second width of the at least one of the second metal lines.

Semiconductor package device having at least one second metal line between two adjacent first metal lines of redistribution layer

An electronic device including a connection element is provided. The connection element includes a first insulation layer and a second insulation layer. The first insulation layer has a first opening. A sidewall of the first insulation layer at the first opening has roughness different from roughness of a top surface of the first insulation layer. The second insulation layer is disposed on the first insulation layer, and the second insulation layer has a second opening. The sidewall of the first insulation layer at the first opening is exposed by the second opening. A method of fabricating an electronic device is also provided.

Electronic device and method of fabricating an electronic device

The embodiment of the disclosure provides a composite layer circuit element of an electronic device. The composite layer circuit element includes a first dielectric layer, a first circuit layer and a second dielectric layer. The first circuit layer is disposed on the first dielectric layer, and the second dielectric layer is disposed on the first circuit layer. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer in a cross section view.

Composite layer circuit element

A manufacturing method of a package structure of an electronic device is provided. The manufacturing method includes the following. First, a carrier plate is provided. The carrier plate includes a composite structure and has a first surface and a second surface opposite to each other. Next, an anti-warpage structure is formed on the first surface of the carrier plate. Then, a redistribution structure is formed on the second surface of the carrier plate. When the package structure manufactured with the manufacturing method of the package structure of the electronic device of the disclosure is applied to the electronic device, reliability and/or electrical properties of the electronic device are enhanced.

Manufacturing method of package structure of electronic device

An electronic device includes a first electronic unit, a second electronic unit, a bonding pad, an insulating layer and a circuit layer. The bonding pad is disposed between the first electronic unit and the second electronic unit. The insulating layer is disposed corresponding to the first electronic unit, to the second electronic unit and to the bonding pad. The first electronic unit is electrically connected with the second electronic unit through the circuit layer and through the bonding pad.

Electronic device and method of forming electronic device

The present disclosure discloses a manufacturing method of an electronic device. A seed layer is formed on a substrate. After patterning the seed layer to form a plurality of sub-seed layers and a plurality of conductive lines, a metal layer is formed on a plurality of the sub-seed layers. The sub-seed layers include a first sub-seed layer and a second sub-seed layer, and the first sub-seed layer and the second sub-seed layer are separated from each other.

Method for manufacturing electronic device

A method for manufacturing an electronic device includes: providing a base layer, wherein the base layer includes a plurality of first dies and a plurality of second dies, and a number of the plurality of first dies is greater than a number of the plurality of second dies; forming a circuit layer on the base layer; and performing an electricity test to confirm whether the circuit layer is electrically connected to one of the plurality of second dies.

A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the second metal layer. A coefficient of thermal expansion of the first dielectric layer is less than a coefficient of thermal expansion of the second dielectric layer.

Redistribution layer structure

The present disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a connecting element. The connecting element includes a first conductive line segment, a second conductive line segment, and a first connecting line segment. The first conductive line segment is electrically connected to the second conductive line segment through the first connecting line segment. In a vertical projection direction, the first connecting line segment has a first height, the first conductive line segment has a second height, and the first height is different from the second height.

Electronic device and manufacturing method thereof

The present disclosure discloses a method for manufacturing an electronic device, including: setting a basic working area; providing a supporting platform having a plurality of vacuum valves; disposing a substrate on the supporting platform; applying vacuum attraction to a portion of the substrate through a portion of the plurality of vacuum valves, wherein the portion of the substrate corresponding to the vacuum attraction is defined as an attracted region; and performing an exposure on a portion of the attracted region, wherein an area of the attracted region is larger than the basic working area and smaller than an area of the supporting platform.

Method for manufacturing an electronic device

An electronic device is provided. The electronic device includes a substrate structure, a control unit, a first circuit structure, and an electronic unit. The substrate structure has a conductive via pattern and a dummy via pattern. The control unit is electrically connected to the conductive via pattern. The first circuit structure is electrically connected to the conductive via pattern. The electronic unit is electrically connected to the control unit through the first circuit structure. The dummy via pattern is electrically insulated from the first circuit structure.

Electronic device and method for forming the same

The present disclosure provides a package device and a manufacturing method thereof. The package device includes an electronic device, a conductive pad having a first bottom surface, and a redistribution layer disposed between the conductive pad and the electronic device. The redistribution layer has a second bottom surface, and the conductive pad is electrically connected to the electronic device through the redistribution layer. The first bottom surface is closer to the electronic device than the second bottom in a normal direction of the electronic device.

Package device

An electronic device is disclosed. The electronic device includes a circuit layer, an electronic element and a thermal conducting element. The electronic element is disposed on the circuit layer and electrically connected to the circuit layer. The thermal conducting element is disposed between the circuit layer and the electronic element. The thermal conducting element is used for performing heat exchange with the electronic element.

Electronic device

An electronic device including an electronic unit and a redistribution layer is disclosed. The electronic unit has connection pads. The redistribution layer is electrically connected to the electronic unit and includes a first insulating layer, a first metal layer and a second insulating layer. The first insulating layer is disposed on the electronic unit and has first openings disposed corresponding to the connection pads. The first metal layer is disposed on the first insulating layer and electrically connected to the electronic unit through the connection pads. The second insulating layer is disposed on the first metal layer. The first insulating layer includes first filler particles, and the second insulating layer includes second filler particles. The first filler particles have a first maximum particle size, the second filler particles have a second maximum particle size, and the second maximum particle size is greater than the first maximum particle size.

The present disclosure discloses a method for manufacturing an electronic device, including: setting a basic working area; a photoresist coating process; a development process; an etching process; an exposure process; a metal plating process; and a polishing process, wherein the photoresist coating process, the development process, the etching process, the exposure process, the metal plating process and the polishing process respectively have a maximum optimized process area, and a smallest one of the maximum optimized process areas is selected as the basic working area.

Growing community of inventors

Miao-Li County, Taiwan

Cheng-Chi Wang