Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Dow Global Technolgoies LLC

Chinese Academy of Sciences

Huawei Technologies Co., Limited

Emensa Technology Ltd. Co.

Other

Rohm and Haas Company

Shanghai Vanchip Technologies Co., Ltd.

Shanghai Research Institute of Chemical Industry Co., Ltd

Guangzhou Bureau, Csg Ehv Power Transmission Company

Shanghai Lvqiang New Materials Co., Ltd

Anhui New Star Pharmaceutical Development Co., Ltd.

Hefei Cosource Pharmaceutical Co., Ltd.

Cheng Chen

Jing Lan Chen

Jeffrey Morris Cogen

Weiwei Yang

Chao Dai

Yun Yu

Liping Wang

Fang Qin

Bin Yuan

Jiren Yuan

Tao Wang

Wei Shan Dong

Bin Huang

Wei Zhu Chen

Mohamed Esseghir

Jing Liu

Xinyu Liu

Pengfei Wang

Jia Chen

Chen Hu

Jing Chen

Chao Ma

Xuanyun Wang

Gangwei Sun

Li Wang

Siyuan Jiang

Qingsong Liu

Beilei Wang

Wenchao Wang

Vanni Parenti

Hu Li

Dachao Li

Wei Wang

Aoli Wang

David Hong Fei Guo

Jianxin Zhang

Hong Wu

Weijun Yang

Shuang Qi

Fengming Zou

Jun Chen

Kailin Yu

Haichao Zhao

Yixian Zhang

Man Zhang

Zhe Du

Qingwang Liu

Juan Liu

Zongru Jiang

Wenliang Wang

Wen Chao Wang

Yige Yin

Xixiang Li

Jiaxin Wu

Yongshou Wang

Sheng Lin

Yongfei Chen

Ao Li Wang

Zheng Zhao

Xiaofei Liang

Mingjun Cui

Shihui Qiu

Ning Chai

Jia Zhang

Feng Ming Zou

Qing Song Liu

Qing Wang Liu

Zi Ping Qi

Zheng Chen

Qingshuai Wu

Yang Zhu

Weijia Zhang

Fang Liu

Hai Lu

Xiaowei Huang

Yong Cai

Zhenjin Cen

Wulue Zheng

Cong Wu

Yongxian Zhou

Qiuping He

Chi Cai

Chuncheng Li

Yikang Chen

Xianwei Zhang

Xiaojun Li

Jijun Du

Ruiduo Li

Chunling Li

Jiecheng Tang

Qiang Guo

Feng Li

Zong Ru Jiang

Jianying Wang

Hangwei Chen

Songlv Qin

Fang He

Qianmao Liang

A gate drive circuit includes a plurality of gate drive units. Each of the gate drive units includes a stage transmission signal selection circuit, a pull-up control circuit, a pulse number reduction circuit, a first inversion circuit, a first output stage, and a second output stage, and can output a second gate control signal with a greater number of pulses and a first gate control signal with a less number of pulses. At least one of the stage transmission signal selection circuit, the first inversion circuit or the second output stage includes three transistors with the same channel type.

Gate drive circuits and display panels

The present disclosure discloses a pixel circuit and a display panel. The pixel circuit comprises a second wire, a first light-emitting control unit, a driving unit, and a compensation unit. A control terminal of the first light-emitting control unit and a control terminal of the compensation unit share the second wire, which can save a wire quantity of the pixel circuit, thereby improving display resolution; at the same time, a control terminal of the driving unit is only equipped with the compensation unit, which reduces a leakage path of the control terminal of the driving unit.

Pixel circuit and display panel having control terminals of units sharing one wire

A positive-and-negative-voltage charge pump circuit, comprising a clock generation module, a positive-voltage charge pump module, a transient enhancement module, and a negative-voltage charge pump module. The positive-voltage charge pump module generates a positive voltage according to a clock signal output by the clock generation module, and the transient enhancement module is used to sample the positive voltage and a power supply voltage, and convert same into currents for comparison, such that the negative-voltage charge pump module provides a switchable input voltage according to a comparison result. The negative-voltage charge pump module can quickly and reliably establish a negative voltage according to a clock signal output by the clock generation module, thereby improving the speed and efficiency of the negative-voltage charge pump module generating the negative voltage. Further disclosed are an integrated circuit chip, which comprises the positive-and-negative-voltage charge pump circuit, and a communication terminal.

Positive-and-negative-voltage charge pump circuit, chip and communication terminal

Embodiments of this application provide example methods for accessing a core network by using a fixed access device. One example method includes: receiving, a network registration request sent by customer-premises equipment; sending a network registration request message for the CPE to a mobile core network based on the network registration request; receiving an authentication request message; performing physical location authentication for the CPE based on a physical location identifier; in response to determining that the physical location authentication succeeds, sending an authentication response to the mobile core network; receiving a registration success message sent by the mobile core network; notifying, based on the registration success message, the CPE that network registration succeeds; and sending a service parameter to the CPE.

Method for accessing mobile core network by using fixed access device

The present invention provides an organic light-emitting diode display device and a manufacturing method thereof. An inorganic insulating layer covering a gate is formed, and an organic insulating layer is formed on the inorganic insulating layer, which prevents a problem of metal residue occurring in a subsequently formed metal layer during etching due to a steep slope. A groove is defined on a position of the organic insulating layer corresponding to the gate, and a metal component for forming a capacitor with the gate is formed in the groove and disposed corresponding to the gate.

Organic light-emitting diode display device and manufacturing method thereof

A specimen preparation method for eliminating a membrane penetration effect on a highly-weathered rock, wherein the method makes an originally uneven surface of a specimen smooth using a cured liquid latex as a filler, thereby eliminating a membrane penetration effect on a highly-weathered rock, and comprises the following specimen preparation steps: specimen cutting, pit filling, surface smoothing, specimen shaping and specimen loading.

Specimen preparation method for eliminating membrane penetration effect on highly-weathered rock

The present disclosure provides a display panel including a display area, a ring-shaped wiring area, and a light-transmitting area. The display panel further includes a first metal layer, a second metal layer, a third metal layer, and an anode layer. The first metal layer includes a first scan line wired in the ring-shaped wiring area. The second metal layer includes a first bridge line. The third metal layer includes a first data line wired in the ring-shaped wiring area. The anode layer includes a second bridge line. The first data line is bridged with the first bridge line. The first scan line is bridged with the second bridge line.

Display panel

The present invention relates to a regenerable hydrogen sulfide adsorbent and a preparation method thereof. The preparation method specifically includes: 1) combining meta-aluminate as an active component with activated alumina as a carrier in a manner of impregnation, spray coating or solid phase mixing to obtain a precursor; 2) aging and drying the precursor, and finally performing roasting to obtain the adsorbent; and 3) processing the adsorbent to present a specific size and shape through shaping measures to meet industrial application requirements. Compared with the prior art, the adsorbent obtained according to the present invention can achieve an efficient removal effect on hydrogen sulfide gas at a material inlet, with a concentration adaption range of 0 to 1000 ppm and an effective removal precision of 0.1 ppm or below.

Regenerable hydrogen sulfide adsorbent and preparation method thereof and application thereof

A display panel, a fabrication method thereof, and a display device are provided. The display panel is divided into a display area, a line switching area, and a bending area in a horizontal direction and includes a substrate, a barrier layer, a buffer layer, an active layer, a first gate insulating layer, a first metal layer, and a second gate insulating layer sequentially formed from bottom to top. The display panel further includes a first through hole, a second metal layer, a first organic layer, a second metal layer, an interlayer insulating layer, and a third metal layer, wherein a portion of the third metal layer penetrates the interlayer insulating layer and is electrically connected to the second metal layer.

Display panel, fabrication method thereof, and display device

A display panel and a display device are provided. When manufacturing a first electrode, by depositing a first transparent electrode layer, a first metal layer, and a second transparent electrode layer on a region of the display panel, and etching the first transparent electrode layer, the first metal layer, and the second transparent electrode layer on the thinned-down region; and afterwards, depositing a third transparent electrode layer, a second metal layer, and a fourth transparent electrode layer, a first electrode of the display panel is formed.

Display panel and display device

The present application provides an array substrate and a manufacturing method of the same, the array substrate includes a display region, the display region includes a thin film transistor structure layer including a gate electrode layer and a source drain electrode layer, wherein the gate electrode layer and the source drain electrode layer are made of an alloy material including one or a group selected from Al, Ge, Nd, Ta, Zr, Ni, or La.

Array substrate with first gate, second gate, binding region with hole, and manufacturing method of same

A thin film transistor (TFT) array substrate having a display region, a pad pending region, and a wiring region connected to the display region and the pad pending region is disclosed and includes a substrate function layer and a plurality of metal layers disposed over the substrate function layer, which includes a substrate layer and all of a buffer layer, an active layer, and a first insulation layer disposed over the substrate layer, wherein the metal layers include a first metal layer, a second metal layer, and a third metal layer separately disposed within the display region and made of a same metal material including aluminum or aluminum alloy. Another aspect of the present disclosure provides a TFT array substrate, a plurality of material layers disposed therein are adopted of a material with low resistance low electrical resistance and being excellent in bending resistance.

TFT array substrate, preparation method thereof and display panel

The present disclosure provides an array substrate, a display panel, and a manufacturing method of the array substrate. The array substrate includes a substrate layer, an active layer, a first insulating layer, a first metal layer, a second insulating layer, a second metal layer, an interlayer insulating layer, an organic filling layer, and a third metal layer being stacked together. The meshed second metal layer is disposed in the display area, and a double-layer power voltage trace structure in the display area is formed by connecting the first via holes and power voltage signal lines of the third metal layer.

Array substrate, display panel, and manufacturing method of array substrate

The present invention provides a display panel, which comprises at least one region to be cut and a functional region; the cross-sectional structure of the display panel comprises a substrate including a first sub-portion corresponding to a position of the region to be cut; a blocking part arranged on the first sub-portion; and a packaging layer arranged on the blocking part, and the contact surface of the packaging layer and the blocking part is a concave-convex surface. The display panel can improve the packaging effect.

Foldable display panel, method of manufacturing thereof, and display device

Growing community of inventors

Wuhan, China

Cheng Chen