Industrial Technology Research Institute

Realtek Semiconductor Inc.

Cheng-Chang Chen

Jung-Yu Li

Yi-Ping Lin

Guan-Yu Chen

Shih-Pu Chen

Jin-Han Wu

Cheng-Hung Li

Neng-Hsien Lin

Jiunn-Hung Shiau

Huei-Jhen Siao

A method and a control chip for performing access control of a memory device are provided, wherein the control chip is coupled to a host device. The method includes: utilizing a first transmission interface of the control chip to determine whether the memory device supports a second transmission interface different from the first transmission interface to generate a determination result; and according to user permissions of a user regarding the host device, determining whether to allow the control chip to decide whether to utilize the second transmission interface to access the memory device based on the determination result. In addition, if the user permissions satisfy a predetermined condition, a user interface of the host device may display a pop-up window in order to allow the user to decide which one of the first transmission interface and the second transmission interface to utilize for accessing the memory device.

Method and control chip for performing access control of memory device

A light emitting device includes an electrode layer, a first metal layer, an organic material layer and a second metal layer stacked sequentially. The first metal layer includes a first metal portion and a second metal portion separated from the first metal portion at a first lateral distance, and the first metal portion and the second metal portion have a first period. The organic material layer includes a first emitting region separating the first metal portion and the second metal portion. The first lateral distance and the first period enable a lateral plasma coupling generated between the first metal portion and the second metal portion, such that light generated by the organic material layer at the first emitting region has a gain in a first waveband, or a peak wavelength of the light generated by the first emitting region shifts to the first waveband.

Light emitting device

A light emitting device includes a substrate layer, first and second metal layers sequentially formed on the substrate layer, and an organic material layer formed between the first and second metal layers. The first metal layer has a uniform thickness or has metal portions or further has an open portion exposing a portion of the surface of the substrate layer. The organic material layer includes a hole transport material and an electron transport material in contact with one another. An interaction between the hole transport material and the electron transport material generates exciplexes capable of emitting light having a peak wavelength in a first range, and a coupling is generated between the first and second metal layers. By adjusting the distance between the first and second metal layers or the thickness of the first metal layer, the peak wavelength of the light is shifted to a second range and/or a third range.

A light emitting element is disclosed, including a substrate layer, a first metal layer and a second metal layer stacked sequentially on the substrate layer, and an organic material layer disposed between the first metal layer and the second metal layer. The first metal layer includes a first metal portion and a second metal portion that cover a surface of the substrate layer, and an opening portion disposed between the first metal portion and the second metal portion and exposes a portion of the surface. The organic material layer emits light having a wavelength within a first range. A first coupling generated between the first metal portion and the second metal layer shifts the light from the first range to a second range. A second coupling generated between the second metal portion and the second metal layer shifts the light from the first range to a third range.

Light emitting element

A light emitting device includes a substrate, a coupling unit and an organic light emitting unit. The coupling unit includes a first conductive layer, a first light emitting layer and a second conductive layer. The first conductive layer is located on the substrate. The first light emitting layer is located between the first conductive layer and the second conductive layer. The organic light emitting unit is located adjacent to the second conductive layer.

A blue light emitting device includes an electrode layer, a first metal layer, a second metal layer formed between the electrode layer and the first metal layer, and an organic material layer formed between the first metal layer and the second metal layer and including a blue shift light emitting sub-layer. A peak of a first light-emitting spectrum of the blue shift light emitting sub-layer, which ranges within 490-550 nm, is shifted to a peak of a second light-emitting spectrum, which is less than 510 nm, by the surface plasmon coupling between the first metal layer and the second metal layer. A light emitting device is further provided, which is sequentially stacked with a first metal layer, an organic material layer having a blue shift light emitting sub-layer, a second metal layer having a metal portion and an opening portion, an electrode layer, and a light emitting layer doped with a dopant material, to emit white light.

Growing community of inventors

Taichung, Taiwan

Cheng-Chang Chen