Rohm & Haas Electronic Materials LLC

Cheng Bai Xu

Cong Liu

Irvinder Kaur

Kevin Rowell

Jong Keun Park

Mingqi Li

Emad Aqad

Xisen Hou

Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210&#xb0; C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

Pattern-formation methods

Methods of trimming a photoresist pattern comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern trimming composition over the photoresist pattern, wherein the pattern trimming composition comprises a second polymer and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of 50 wt % or more based on the solvent system; (d) heating the coated semiconductor substrate, thereby causing a change in solubility of a surface region of the photoresist pattern in a rinsing agent to be applied; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

Pattern trimming methods

Photoresist pattern trimming compositions comprise: a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution; and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 50 to 98 wt % based on the solvent system. The compositions find particular applicability in the manufacture of semiconductor devices.

Pattern trimming compositions and methods

A photoacid generator compound has formula (1) wherein n is zero or 1; and R-Rare each independently hydrogen, halogen, or unsubstituted or substituted Clinear or branched alkyl, Ccycloalkyl, Caryl, Cheteroaryl, or an acid-generating group having the structure*L-ZM]wherein L is an unsubstituted or substituted Cdivalent group; Zis a monovalent anionic group; and Mis an iodonium or sulfonium cation. Geminal R groups can combine to form a ring with the carbon to which they are attached, as long as no more than two such rings are formed. At least one of R-Rincludes the acid-generating group or two germinal R groups combine to form the acid-generating group. Also described are a photoresist composition incorporating the photoacid generator compound, a coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using a layer of the photoresist composition.

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Southborough, MA, United States of America

Cheng Bai Xu