Via Technologies, Inc.

Via Alliance Semiconductor Co., Ltd.

Chen-Yueh Kung

Wen-Yuan Chang

Wei-Cheng Chen

Kwun-Yao Ho

Yeh-Chi Hsu

Kuo-Tso Chen

Jackie Fu

Hsin-I Chuang

Ting-You Wei

Ming-Jen Lin

A process for fabricating a circuit substrate is provided. A dielectric layer is formed to cover a surface of a circuit stack and a patterned conductive layer, and has bonding openings exposing bonding segments of traces of the patterned conductive layer, and has plating openings exposing plating segments of the traces. A plating seed layer is formed to cover the surface of the circuit stack, the bonding segments, the plating segments, and the dielectric layer. A mask is formed to cover the plating layer and has mask openings exposing portions of the plating seed layer on the bonding segments. Portions of the plating seed layer on the bonding segments are removed with use of the mask as an etching mask. A thickening conductive layer is plated on each of the bonding segments with use of the mask as a plating mask. The mask and the plating seed layer are removed.

Process for fabricating a circuit substrate

A probe card including a circuit board, a transformer, a probe head, and a reinforcement structure is provided. The transformer including a body, a plurality of solder balls, and a plurality of first contact points are disposed on the substrate. The body has a first surface and a second surface, wherein the first surface is located between the circuit board and the second surface. The solder balls are disposed on the first surface, and the first contact points are disposed on the second surface. The probe head is disposed on the second surface. The probe head is electrically connected to the circuit board by the first solder balls. The reinforcement structure is disposed between the probe head and the circuit board.

Probe card

A circuit substrate for a chip bonding thereon includes a core substrate having a chip-side surface and a bump-side surface opposite to the chip-side surface, a first through via plug passing through the core substrate, a pad disposed on the bump-side surface, in contact with the first through via plug, and a first thickness enhancing conductive pattern disposed on a surface of the pad, which is away from the bump-side surface.

Circuit substrate and semiconductor package structure

A circuit substrate includes a circuit stack, a patterned conductive layer, a dielectric layer, and a plurality of thickening conductive layers. The circuit stack has a surface. The patterned conductive layer is located on the surface of the circuit stack and has a plurality of traces. Each of the traces has a bonding segment. The dielectric layer is located on the surface of the circuit stack and covers the patterned conductive layer. Besides, the dielectric layer has a plurality of bonding openings. Each of the bonding openings exposes the corresponding bonding segment. Each of the thickening conductive layers is located on the corresponding bonding segment. A semiconductor package structure having the above circuit substrate and a process for fabricating a circuit substrate are also provided.

Circuit substrate and semicondutor package structure

A circuit substrate has the following elements. A stacked circuit structure has a first surface and a second surface opposite thereto surface. A first patterned inner conductive layer is disposed on the first surface and has multiple pads. A first patterned outer conductive layer is disposed on the patterned inner conductive layer and has multiple conductive pillars, wherein each of the first conductive pillar is located on the corresponding first pad. The first dielectric layer covers the first surface, the first patterned inner conductive layer and the first patterned outer conductive layer, and has multiple first concaves, wherein the first concave exposes the top and side of the corresponding first conductive pillar. A semiconductor package structure applied the above circuit substrate and a process for fabricating the same are also provided here.

Circuit substrate, semiconductor package and process for fabricating the same

An electronic structure is provided with a redistribution structure and the following elements. A first supporting structure has a first opening and is disposed on a first surface of the redistribution structure. A second supporting structure has a second opening and is disposed on a second surface of the redistribution structure opposite to the first surface. A first bonding protruding portions are disposed on the first surface of the redistribution structure and located in the first opening. A second bonding protruding portions are disposed on the second surface of the redistribution structure and located in the second opening. A first encapsulated material is filled between the first opening and the first bonding protruding portions. A second encapsulated material is filled between the second opening and the second bonding protruding portions. An electronic structure array is also provided.

Electronic structure, and electronic structure array

An electronic structure process includes the following steps. A redistribution structure and a carrier plate are provided. A plurality of first bonding protruding portions and a first supporting structure are formed on the redistribution structure. A first encapsulated material is formed and filled between a first opening and the first bonding protruding portions. The carrier plate is removed. A plurality of second bonding protruding portions and a second supporting structure are formed on the redistribution structure. A second encapsulated material is formed and filled between a second opening and the second bonding protruding portions.

Electronic structure process

The invention provides a circuit substrate and a package structure. The circuit substrate includes a molding compound having a chip-side surface and a solder ball-side surface opposite from the chip side surface. A first conductive bulk is formed embedded in the molding compound. The first conductive bulk has a first number of first chip-side bond pad surfaces and a second number of first solder ball-side surfaces exposed from the chip side surface and the ball-side surface, respectively. The width of the first conductive bulk is greater than the first width of the first chip-side bond pad surfaces and the second width of the first solder ball-side surfaces.

Circuit substrate and package structure

The invention provides a circuit substrate and a semiconductor package structure. The circuit substrate includes a core substrate having a chip-side surface and a bump-side surface opposite to the chip-side surface. A first through via plug passes through the core substrate. A first conductive line pattern and a second conductive line pattern adjacent to the first conductive line are disposed on the chip-side surface. A pad is disposed on the bump-side surface. The first through via plug is in direct contact with and partially overlapping the first conductive line pattern and the pad. The first conductive line pattern, the second conductive line pattern and the first through via plug are configured to transmit voltage supplies of the same type.

A circuit substrate includes a base layer, a first patterned conductive layer, a dielectric layer, a conductive block and a second patterned conductive layer. The first patterned conductive layer is disposed on the base layer and has a first pad. The dielectric layer is disposed on the base layer and covers the first patterned conductive layer, wherein the dielectric layer has an opening and the first pad is exposed by the opening. The conductive block is disposed in the opening and covers the first pad. The second patterned conductive layer is disposed on a surface of the dielectric layer and has a second pad, wherein the second pad and the conductive block are integrally formed.

Circuit substrate

A circuit substrate includes a dielectric layer and a plurality of conductive structures. The dielectric layer has a plurality of conductive openings, a first surface, and a second surface opposite to the first surface. Each of the conductive openings connects the first surface and the second surface. The conductive openings are respectively filled with the conductive structures. Each of the conductive structures is integrally formed and includes a pad part, a connection part, and a protruding part. Each of the connection parts is connected to the corresponding pad part and the corresponding protruding part. Each of the protruding parts has a curved surface that protrudes from the second surface. A process for fabricating the circuit substrate is also provided.

A process for fabricating a circuit substrate is provided. The process includes the following steps. A carrier is provided. A conductive layer and a dielectric layer are placed on the carrier, and the conductive layer is located between the carrier and the dielectric layer. The dielectric layer is patterned to form a patterned-dielectric layer having first openings partially exposing the conductive layer. Arc-shaped grooves are formed on the exposed part of the conductive layer. A first-patterned-photoresist layer having second openings respectively connecting the first openings is formed. Conductive structures are formed, wherein each of the conductive structures is integrally formed and includes a pad part, a connection part, and a protruding part; the second openings, the first openings and the arc-shaped grooves are respectively filled with the pad parts, the connection parts and the protruding parts. The first patterned photoresist layer, the carrier and the conductive layer are removed.

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Taipei, Taiwan

Chen-Yueh Kung