Au Optronics Corporation

Chen-Yuan Tu

Tai-Tso Lin

Chun-Nan Lin

Wei-Chou Chen

Shu-Feng Wu

Yih-Chyun Kao

Chen-Chung Wu

Chia Wen Dai

Po-Jen Chen

Hui-Min Sung

Cheng-Min Lu

I-Peng Chien

A display apparatus includes a driving backplane and a light-emitting element. The driving backplane includes a substrate, a pixel driving circuit disposed on the substrate and a pad electrically connected to the pixel driving circuit. The pad has a first metal layer, a first intermetallic layer and a first diffusion barrier layer, wherein the first metal layer, the first intermetallic layer and the first diffusion barrier layer are sequentially stacked along a direction away from the substrate. The light-emitting element includes an electrode and a conductive bump electrically connected to the electrode. The conductive bump has a second intermetallic layer, and the first diffusion barrier layer is located between the second intermetallic layer and the first intermetallic layer.

Display apparatus

A display panel has a plurality of pixel areas and a peripheral area surrounding the pixel areas, and includes a substrate, at least two planarization layers, a plurality of pads, a first dummy pattern, and a plurality of light-emitting devices. The substrate has a first substrate edge extending in a first direction. The at least two planarization layers are disposed on the substrate. The pads are disposed on the at least two planarization layers, and are located in the pixel areas. The pads include at least one first edge pad closest to the first substrate edge. The first dummy pattern is disposed on the at least two planarization layers, and extends in the peripheral area between the at least one first edge pad and the first substrate edge. The light-emitting devices are electrically connected to the pads.

Display panel

A pixel structure includes a substrate, a thin film transistor disposed on the substrate and having a first end, a second end and a control end, a first signal line electrically connected to the first end of the thin film transistor, a second signal line electrically connected to the control end of the thin film transistor, a pixel electrode electrically connected to the second end of the thin film transistor, and a light shielding layer. At least one of the first end of the thin film transistor, the second end of the thin film transistor, the control end of the thin film transistor, the first signal line and the second signal line is formed of a conductive layer. The light shielding layer is disposed on a top surface and a sidewall of the conductive layer. The light shielding layer includes a photoresist and particles mixed within the photoresist.

Pixel structure

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate, a channel layer, a gate insulation layer, a source, a drain and a silicon-aluminum-oxide layer. The gate is disposed on a substrate. The channel layer is disposed on the substrate. The channel layer overlaps the gate. The gate insulation layer is disposed between the gate and the channel layer. The source and the drain are disposed on two sides of the channel layer. The silicon-aluminum-oxide layer is disposed on the substrate and covers the source, the drain and the channel layer.

Semiconductor device and manufacturing method thereof

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Taipei, Taiwan

Chen-Yuan Tu