Taiwan Semiconductor Manufacturing Comp. Ltd.

Chen-Yu Liu

Ching-Yu Chang

Chin-Hsiang Lin

Ming-Hui Weng

Tzu-Yang Lin

Cheng-Han Wu

An-Ren Zi

Ya-Ching Chang

Tze-Liang Lee

Yen-Yu Chen

Chi-Ming Yang

Jr-Hung Li

Wei-Han Lai

Yahru Cheng

Chih-Cheng Liu

Siao-Shan Wang

Yi-Chen Kuo

Jia-Lin Wei

Ming-Huei Weng

Ming-Da Cheng

Chien-Chih Chen

Kuo-Shu Tseng

Yen-Hao Chen

Chen Yi Hsu

Shang-Sheng Li

Yung-Han Chuang

Yu-Cheng Chang

A method for forming a semiconductor structure is provided. The method includes forming a patterned photoresist layer over a substrate and removing the patterned photoresist layer using a photoresist stripping composition that is free of dimethyl sulfoxide. The photoresist stripping composition includes an organic alkaline compound including at least one of a primary amine, secondary amine, a tertiary amine or a quaternary ammonium hydroxide or a salt thereof, an organic solvent selected from the group consisting of a glycol ether, a glycol acetate, a glycol, a pyrrolidone and mixtures thereof, and a polymer solubilizer.

Non-DMSO stripper for advance package metal plating process

The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, portions of an adhesion layer, barrier layer and/or seed layer is protected by a layer of an organic mask material as portions of the adhesion layer, barrier layer and/or seed layer are removed. The layer of organic mask material is modified to improve its resistance to penetration by wet etchants used to remove exposed portions of the adhesion layer, barrier layer and/or seed layer. An example modification includes treating the layer of organic mask material with a surfactant that is absorbed into the layer of organic mask material.

Treatment of spin on organic material to improve wet resistance

A method of forming a photoresist pattern includes forming an upper layer including a floating additive polymer over a photoresist layer formed on a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the upper layer is removed. The floating additive polymer is a siloxane polymer.

Photoresist composition and method of forming photoresist pattern

A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

Adhesion layer for multi-layer photoresist

A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

Lithography method for positive tone development

A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer, the resist layer includes an inorganic material. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes forming a modified layer over the resist layer, and the modified layer includes an auxiliary. The method includes performing an exposure process on the modified layer and the resist layer, and removing a portion of the modified layer and a first portion of the resist layer by a first developer. The first developer includes a ketone-based solvent having a substituted or unsubstituted C-Ccyclic ketone, an ester-based solvent having a formula (b), or a combination thereof.

Method for forming semiconductor structure

A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure: The second ligands each have a following structure: {circle around (M)} represents the core group. L' represents a chemical that includes 0-2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1-6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1-6 carbon atoms saturated by H. L″′ represents a chemical that includes 1-6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L″′ together.

EUV photoresist with low-activation-energy ligands or high-developer-solubility ligands

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Method of manufacturing a semiconductor device

A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15<δ<25, 10<δ<25, and 6<δ<30; an acid having an acid dissociation constant, pKa, of −15<pKa<5, or a base having a pKa of 40>pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.

Photoresist developer and method of developing photoresist

A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.

Liquid storage for facility chemical supply system

In a method, a resist material is dispensed through a tube of a nozzle of a resist pump system on a wafer. The tube extends from a top to a bottom of the nozzle and has upper, lower, and middle segments. When not dispensing, the resist material is retracted from the lower and the middle segments, and maintained in the upper segment of the tube. When retracting, a first solvent is flown through a tip of the nozzle at the bottom of the nozzle to fill the lower segment of the tube with the first solvent and to produce a gap in the middle segment of the tube between the resist material and the first solvent. The middle segment includes resist material residues on an inner surface wall of the tube and vapor of the first solvent. The vapor of the first solvent prevents the resist material residues from drying.

Resist dispensing system and method of use

A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and identifying a material of the substrate upon which a layer is to be formed. A priming material is dispensed on the material of the substrate, and a film-forming material is applied to the priming material. The priming material includes a molecule containing a first group based on an attribute of the substrate material and a second group based on an attribute of the film-forming material. Suitable attributes of the substrate material and the film-forming material include water affinity and degree of polarity and the first and second groups may be selected to have a water affinity or degree of polarity that corresponds to that of the substrate material and the film-forming material, respectively.

Priming material for substrate coating

A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15&#x3c;&#x3b4;&#x3c;25, 10&#x3c;&#x3b4;&#x3c;25, and 6&#x3c;&#x3b4;&#x3c;30; an acid having an acid dissociation constant, pKa, of &#x2212;15&#x3c;pKa&#x3c;5, or a base having a pKa of 40&#x3e;pKa&#x3e;9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.

A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure:  The second ligands each have a following structure: represents the core group. L' represents a chemical that includes 0&#x2dc;2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1&#x2dc;6 carbon atoms saturated by H or F. L&#x2033; represents a chemical that includes 1&#x2dc;6 carbon atoms saturated by H. L&#x2032;&#x2033; represents a chemical that includes 1&#x2dc;6 carbon atoms saturated by H or F. Linker represents a chemical that links L&#x2033; and L&#x2032;&#x2033; together.

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Kaohsiung, Taiwan

Chen-Yu Liu