Taiwan Semiconductor Manufacturing Comp. Ltd.

Chen-Yin Hsu

Ching-Hung Kao

Chun Li Wu

The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a MIM dual capacitor structure with an increased capacitance per unit area in a semiconductor structure. Without using additional mask layers, a second parallel plate capacitor can be formed over a first parallel plate capacitor, and both capacitors share a common capacitor plate. The two parallel plate capacitors can be connected in parallel to increase the capacitance per unit area.

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Tainan, Taiwan

Chen-Yin Hsu