Phison Electronics Corporation

Chen Yang Tang

Wei Hung Lin

Shih-Jia Zeng

Hsiao-Yi Lin

Chih-Wei Wang

Chen-An Hsu

Shi-Chieh Hsu

The present disclosure provides a memory management method, a memory storage apparatus and a memory control circuit unit. The method includes: performing a first operation on a plurality of physical units to obtain a quality estimation parameter corresponding to the physical units; establishing a check list according to the quality estimation parameter, wherein the check list records index information of a first physical unit among the physical units, and a number of the first physical unit is less than a total number of the physical units; and in response to a default condition being satisfied, performing a status scanning on the first physical unit according to the index information in the check list.

Memory management method, memory storage apparatus and memory control circuit unit

A read voltage adjustment method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending a write command sequence instructing to program a plurality of first memory cells in a rewritable non-volatile memory module; sending a first read command sequence instructing to read the programmed first memory cells using a first read voltage level to obtain first count information; obtaining first compensation information corresponding to the first read voltage level, wherein the first compensation information reflects a deviation in evenly programming the first memory cells to a plurality of states; and adjusting the first read voltage level according to the first count information, the first compensation information, and default count information corresponding to the first read voltage level.

Read voltage adjustment method, memory storage device and memory control circuit unit

Growing community of inventors

Taoyuan, Taiwan

Chen Yang Tang