Vanguard International Semiconductor Corporation

Tsinghua University

Chen-Wei Wu

Shang-Hui Tu

Jui-Chun Chang

Yeh-Ning Jou

Cheng-Hsien Liu

Hsin-Yu Lai

Hui-Ling Lin

Tzu-Chi Yu

Chau-Ting Yeh

Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices are presented. An IGBT-ESD device includes a semiconductor substrate and patterned insulation regions disposed on the semiconductor substrate defining a first active region and a second active region. A high-V N-well is formed in the first active region of the semiconductor substrate. A P-body doped region is formed in the second active region of the semiconductor substrate, wherein the high-V N-well and the P-body doped region are separated with a predetermined distance exposing the semiconductor substrate. A Pdoped drain region is disposed in the high-V N-well. A Pdiffused region and an Ndoped source region are disposed in the P-body doped region. A gate structure is disposed on the semiconductor substrate with one end adjacent to the Ndoped source region and the other end extending over the insulation region.

Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices

Disclosed is a microfluidic chip and method using the same. The microfluidic chip comprises a substrate having a surface, and at least a tissue culture area formed on the surface of the substrate. The tissue culture area has a microfluidic channel formed by a plurality of connected geometrical structures (nozzle-type channels) having a predetermined depth. The microfluidic channel has an inlet and an outlet, which are at two ends of the microfluidic channel, for medium inputting and outputting, respectively. Additionally, at least an air-exchange hole is formed on the bottom of the microfluidic channel. By using the microfluidic chip for tissue culture, lateral flow speed and stress can be decreased, so as to prolong survival time of tissues (e.g. liver tissues).

Microfluidic chip and method using the same

Growing community of inventors

Hsinchu, Taiwan

Chen-Wei Wu