Macdermid Enthone Gmbh

Yale University

Enthone Incorporated

Chen Wang

Joseph Anthony Abys

Vincent Paneccasio, Jr

Thomas B Richardson

Cai Wang

Xuan Lin

Wenbo Shao

Richard W Hurtubise

Yun Zhang

Theodore Antonellis

Michel Devoret

Robert J Schoelkopf, Iii

Luigi Frunzio

Vincent Paneccasio

Yvonne Gao

Sean Xuan Lin

Jr Vincent Paneccasio

According to some aspects, a method is provided of operating a system that includes a multi-level quantum system dispersively coupled to a first quantum mechanical oscillator and dispersively coupled to a second quantum mechanical oscillator, the method comprising applying a first drive waveform to the multi-level quantum system, applying one or more second drive waveforms to the first quantum mechanical oscillator, and applying one or more third drive waveforms to the second quantum mechanical oscillator.

Techniques for manipulation of two-qubit quantum states and related systems and methods

A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Process for filling vias in the microelectronics

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions.

Copper filling of through silicon vias

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.

Copper metallization of through silicon via

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New Haven, CT, United States of America

Chen Wang