Au Optronics Corporation

Chen-Shuo Huang

Hung-Wei Li

Yang-Shun Fan

Keh-Long Hwu

Chih-Ling Hsueh

Chia-Hsun Tu

Kuo-Kuang Chen

Po-Yang Lin

Chih-Pang Chang

Ji-Feng Chen

An active device substrate includes a substrate, an active device and a barrier layer. The active device is located on the substrate. The barrier layer is located on the active device. The barrier layer includes a first hydrogen atom distribution region and a second hydrogen atom distribution region. The first hydrogen atom distribution region includes silicon nitride and hydrogen atom. The first hydrogen atom distribution region is located between the second hydrogen atom distribution region and the substrate. The second hydrogen atom distribution region includes silicon nitride and hydrogen atom. The concentration of nitrogen atom in the first hydrogen atom distribution region is less than the concentration of nitrogen atom in the second hydrogen atom distribution region. The highest concentration of hydrogen atom in the first hydrogen atom distribution region is greater than the highest concentration of hydrogen atom in the second hydrogen atom distribution region.

Active device substrate and fabrication method of active device substrate

An active element and a manufacturing method thereof are provided. The active element includes a substrate, a switching bottom gate and a driving bottom gate disposed on the substrate, a first gate insulating layer disposed on the substrate and covering the switching bottom gate and the driving bottom gate, a switching channel and a driving channel disposed on the first gate insulating layer, a second gate insulating layer disposed on the first gate insulating layer and covering the switching channel and the driving channel, and a switching top gate and a driving top gate disposed on the second gate insulating layer. The driving channel has a low potential end electrically connected to the driving bottom gate. A thickness of the second gate insulating layer is greater than a thickness of the first gate insulating layer. The switching top gate is electrically connected to the switching bottom gate.

Display device including active element comprising TFTS with gate insulating layers having thicknesses optimized to maintain subthreshold swing, and manufacturing method thereof

A thin film transistor includes a semiconductor layer, a first gate electrode disposed at one side of the semiconductor layer, a first gate insulating layer disposed between the first gate electrode and the semiconductor layer, a second gate electrode and a third gate electrode disposed at another side of the semiconductor layer, and a second gate insulating layer. The second gate electrode is separated from the third gate electrode. The second gate insulating layer is disposed between the second and third gate electrodes and the semiconductor layer. An orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the second gate electrode on the semiconductor layer. The orthogonal projection of the first gate electrode on the semiconductor layer is partially overlapped with an orthogonal projection of the third gate electrode on the semiconductor layer.

Thin film transistor

An active device substrate includes a substrate, a silicon layer, a first insulating layer, a first gate, a first dielectric layer, a first transfer electrode, a second transfer electrode, and a second dielectric layer. Two openings penetrate through the first dielectric layer and overlap the silicon layer. The first transfer electrode and the second transfer electrode are respectively located in the two openings. The second dielectric layer is located on the first transfer electrode and the second transfer electrode. Two first through-holes penetrate through the second dielectric layer. The first transfer electrode and the second transfer electrode are etch stop layers of the two first through-holes.

Active device substrate comprising silicon layer and manufacturing method thereof

A pixel structure includes a metal oxide semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, a passivation layer, a second conductive layer and a pixel electrode. The metal oxide semiconductor layer includes a second semiconductor pattern. The first insulating layer includes a first capacitance dielectric pattern disposed on the second semiconductor pattern. The second insulating layer includes a second capacitance dielectric pattern disposed on the first capacitance dielectric pattern. The first conductive layer includes a electrode pattern disposed on the second capacitance dielectric pattern. The passivation layer covers the first conductive layer. The second conductive layer includes a second electrode disposed on the passivation layer. The second electrode is electrically connected to the second semiconductor pattern. The second electrode is disposed to overlap the electrode pattern. The second semiconductor pattern, the electrode pattern and the second electrode form a storage capacitor.

Pixel structure

A flexible display has a display layer, a thin-film transistor (TFT) layer and a flexible substrate. The display layer has a plurality of display units. The TFT layer has a plurality of pixel control circuits and a plurality of sensing circuits. The pixel control circuits are configured to control operations of the plurality of display units. Each of the sensing circuits is configured to generate a deformation signal according to deformation of the flexible display. The flexible substrate and the TFT layer are stacked.

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Hsin-Chu, Taiwan

Chen-Shuo Huang