Epistar Corporation

Chen Ou

Chao-Hsing Chen

Chien-Fu Shen

Hsin-Ying Wang

Tsun-Kai Ko

Chiu-Lin Yao

Wen-Hsiang Lin

Shih-Kuo Lai

Min-Hsun Hsieh

Hui-Chun Yeh

Li-Ming Chang

Chen-Ke Hsu

Chun-Wei Chang

Chih-Wei Wu

Chih-Hao Chen

Tzu-Chieh Hsu

Shih-Chang Lee

Chien-Chih Liao

Chi Hsiu Lee

Wu-Tsung Lo

Ching-San Tao

Chia-Ming Chuang

Chia-Liang Hsu

Schang-Jing Hon

Chien-Kai Chung

Shih-Wei Wang

Yao-Ning Chan

Yi-Tang Lai

Tzung-Shiun Yeh

Hui-Fang Kao

Chia-Chen Tsai

Peng Ren Chen

Sheng-Chih Wang

Yu-Shan Chiu

Ting-Yang Lin

Hsin-Mei Tsai

Chuan-Cheng Chang

Yun-Chung Chou

Yu-Rui Lin

An-Ju Lin

Chia Chen Tsai

Chi Shiang Hsu

De-Shan Kuo

Wen-Luh Liao

Chun-Chang Chen

Po-Shun Chiu

Chun-Hsiang Tu

Chia-Chen Chang

Wei-Chieh Lien

Chia-Ming Liu

Hsu-Cheng Lin

Tzu-Chieh Hu

Liang Sheng Chi

Donald Tai-Chan Huo

Tzu-Ling Yang

Win-Jim Su

Mei-Ling Tsai

Win Jim Su

Jia-Rong Chang

Yi Lung Liu

Tzu-Yi Chi

Po-Chun Liu

Chien-Fu Huang

Yi-Ming Chen

Wen-Huang Liu

Chun-Yu Lin

Shih-I Chen

Wei Wang

Chao Hsing Chen

Wei-Chih Peng

Ting-Chia Ko

Wei-Han Wang

Chia-Cheng Liu

Chao-Nien Huang

Tzu-Feng Tseng

Chao-Shun Huang

Shu-Wen Sung

Liang-Sheng Chi

Chuan-Ming Chang

Chun-Teng Ko

Chang-Huei Jing

Chi-Ling Lee

Yi-Yang Chiu

Heng-Ying Cho

Chu-Jih Su

Hung-Chih Yang

Yen-Chun Tseng

Jun-Yi Li

Mei Chun Liu

Chi-Hung Wu

Li-Yu Shen

Yi Lin Guo

Hung Chih Yang

Chi Hung Wu

Yi-Lin Guo

Hui-Tang Shen

Chin-Fu Ku

Chen Ke Hsu

Chang-Hsiu Wu

Wei-Wun Jheng

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

Semiconductor device

The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

Semiconductor light-emitting device and semiconductor light-emitting component

Light-emitting device

A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.

Light-emitting device and display device having the same

A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.

Method of manufacturing a light-emitting device

A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

Semiconductor photo-detecting device

Light-emitting diode device

A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.

A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions regularly formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions includes a first portion and a second portion formed on the first portion and the first portion is integrated with the base portion; and wherein the base portion includes a first material and the first portion includes the first material.

Growing community of inventors

Hsinchu, Taiwan

Chen Ou