Epistar Corporation

Chen Ou

Chao-Hsing Chen

Chien-Fu Shen

Hsin-Ying Wang

Tsun-Kai Ko

Chiu-Lin Yao

Wen-Hsiang Lin

Shih-Kuo Lai

Min-Hsun Hsieh

Hui-Chun Yeh

Shih-Chang Lee

Li-Ming Chang

Chen-Ke Hsu

Chun-Wei Chang

Chih-Wei Wu

Chih-Hao Chen

Tzu-Chieh Hsu

Shih-Wei Wang

Chien-Chih Liao

Chi Hsiu Lee

Wu-Tsung Lo

Ching-San Tao

Chia-Ming Chuang

Chia-Liang Hsu

Schang-Jing Hon

Wen-Luh Liao

Chien-Kai Chung

Yao-Ning Chan

Yi-Tang Lai

Tzung-Shiun Yeh

Hui-Fang Kao

Chia-Ming Liu

Chia-Chen Tsai

Peng Ren Chen

Sheng-Chih Wang

Yu-Shan Chiu

Ting-Yang Lin

Hsin-Mei Tsai

Chuan-Cheng Chang

Yun-Chung Chou

Yu-Rui Lin

An-Ju Lin

Chia Chen Tsai

Chi Shiang Hsu

De-Shan Kuo

Chun-Chang Chen

Po-Shun Chiu

Wei-Chih Peng

Chun-Hsiang Tu

Chia-Chen Chang

Chao-Shun Huang

Wei-Chieh Lien

Hsu-Cheng Lin

Chu-Jih Su

Tzu-Chieh Hu

Liang Sheng Chi

Mei Chun Liu

Hsuan-Le Lin

Donald Tai-Chan Huo

Tzu-Ling Yang

Win-Jim Su

Mei-Ling Tsai

Win Jim Su

Jia-Rong Chang

Chia-Hsiang Chou

Yi Lung Liu

Tzu-Yi Chi

Po-Chun Liu

Chien-Fu Huang

Yi-Ming Chen

Wen-Huang Liu

Chun-Yu Lin

Shih-I Chen

Wei Wang

Chao Hsing Chen

Ting-Chia Ko

Wei-Han Wang

Chia-Cheng Liu

Chao-Nien Huang

Tzu-Feng Tseng

Shu-Wen Sung

Liang-Sheng Chi

Chuan-Ming Chang

Chun-Teng Ko

Chang-Huei Jing

Chi-Ling Lee

Yi-Yang Chiu

Heng-Ying Cho

Jun-Yi Li

Jing-Jie Dai

Hung-Chih Yang

Yen-Chun Tseng

Chi-Hung Wu

Li-Yu Shen

Dian-Ying Hu

Yi Lin Guo

Hung Chih Yang

Chi Hung Wu

Yi-Lin Guo

Hui-Tang Shen

A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, an insulating layer located on the second semiconductor layer, and an electrode structure located on the insulating layer. The second semiconductor layer includes a first region having a first conductivity-type and a second region having a second conductivity-type different from the first conductivity-type. The first region is surrounded by the second region, and includes a geometric center and an interface between the first region and the second region. The insulating layer covers the first region and the second region. The electrode structure includes an outer sidewall located on the second region. In a top view, the interface is located between the geometric center and the outer sidewall.

Semiconductor photo-detecting device

A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.

Light-emitting device

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

Semiconductor device

The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

Semiconductor light-emitting device and semiconductor light-emitting component

A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.

Light-emitting device and display device having the same

A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.

Method of manufacturing a light-emitting device

A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

Light-emitting diode device

A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.

Growing community of inventors

Hsinchu, Taiwan

Chen Ou