Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Chen Ming Hu

Yee-Chia Yeo

Fu-Liang Yang

Chun-Chieh Lin

Chao-Hsiung Wang

Wen-Chin Lee

Chien-Chao Huang

Chung-Hu Ge

Chun Chieh Lin

Fu Liang Yang

A CMOS integrated circuit includes a substrate having an NMOS region with a P-well and a PMOS region with an N-well. A shallow trench isolation (STI) region is formed between the NMOS and PMOS regions and a composite silicon layer comprising a strained SiGe layer is formed over said P well region and over said N well region. The composite silicon layer is disconnected at the STI region. Gate electrodes are then formed on the composite layer in the NMOS and PMOS regions.

Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer

An ultra thin MOSFET device structure located on an insulator layer, and a method of forming the ultra thin MOSFET device structure featuring a strained silicon channel located on the underlying insulator layer, has been developed. After epitaxial growth of a semiconductor alloy layer such as silicon-germanium (SiGe), on a first semiconductor substrate, a strained silicon channel layer, under biaxial tensile strain, is epitaxially grown on the underlying semiconductor alloy layer. Bonding of the strained silicon channel layer of the first semiconductor substrate, to a silicon oxide layer located on the surface of a second semiconductor substrate, is followed by a cleaving procedure performed at the interface of the strained silicon channel layer and the underlying semiconductor alloy layer, resulting in the desired configuration comprised of strained silicon channel layer-underlying insulator layer-second semiconductor substrate. The MOSFET device is then formed featuring the strained silicon channel layer, on the underlying silicon oxide layer, with enhanced carrier mobility realized as a result of the biaxial tensile strain of the silicon channel layer.

MOSFET device with a strained channel

A process for fabricating CMOS devices, featuring a channel region comprised with a strained SiGe layer, has been developed. The process features the selective growth of a composite silicon layer on the top surface of N well and P well regions. The composite silicon layer is comprised of a thin, strained SiGe layer sandwiched between selectively grown, undoped silicon layers. The content of Ge in the SiGe layer, between about 20 to 40 weight percent, allows enhanced carrier mobility to exist without creation of silicon defects. A thin silicon dioxide gate insulator is thermally grown from a top portion of the selectively grown silicon layer, located overlying the selectively grown SiGe layer.

A strained silicon layer fabrication and a method for fabrication thereof employ a strained insulator material layer formed over a strained silicon layer in turn formed upon a strained silicon-germanium alloy material layer which is formed upon a relaxed material substrate. The strained insulator material layer provides increased fabrication options which provide for enhanced fabrication efficiency when fabricating the strained silicon layer fabrication.

Strained silicon layer semiconductor product employing strained insulator layer

A flexible plastic massage disk comprises a filled sack containing a vibration motor, with wires, power supply switch and power supply box connected thereto. The vibration motor is installed in the sack and the wires extend through the wall of the sack to the power supply switch which is connected to the power supply box. The sack is filled with plastic by deformable material for allowing the sack to take on the curvature at different places on the human body for a complete match to the part of the human body that requires massage. Once the power is turned on, oscillations will result from the vibration motor in the sack, and travel through the plastic material to soften such vibrations and transmit them to the entire sack. The user can enjoy a larger area of stimulation and feels a soft comfortable oscillation massage effect, particularly for those people reaching above middle age, to offer a more proper and long duration massage so as to provide an excellent fatigue stopping, beautifying and health promoting circulation to a particular part (such as the testicles) of the human body.

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Hsin-Chu, Taiwan

Chen Ming Hu