Taiwan Semiconductor Manufacturing Comp. Ltd.

Chen Liang Chang

Chin-Szu Lee

Cheng-Yi Wu

Chia-Chun Hung

Hsiang Sheng Liu

Li-Hsuan Chu

Ching-Wen Wen

Kuo Hui Chang

Chia-Ching Lee

Chi-chun Peng

Chi-Chun Peng

Ryder Su

Young-Wei Lin

Yu Liang Huang

Po-Yu Su

At least one embodiment, a vacuum chuck includes a moisture gate structure that allows for moisture to escape to reduce an amount of warpage in a workpiece when present on the vacuum chuck. The moisture gate structure includes a base portion that extends laterally outward from a central vacuum portion of the vacuum chuck, and a plurality of protrusions are spaced apart from the central vacuum portion and extend outward from the base portion. End surfaces of the plurality of protrusions contact a backside surface of the workpiece (e.g., a wafer on a carrier) when the workpiece is present on the vacuum chuck. The vacuum chuck may further include one or more guide portions that act as guides such that the workpiece remains properly aligned and within position when present on the vacuum chuck.

Vacuum chuck

A method of removing a sacrificial substructure from a support structure is disclosed. The method includes receiving the support structure, where the support structure has the sacrificial substructure connected thereto, the sacrificial substructure having functioning electrical devices removed therefrom. The method also includes applying a barrier to the sacrificial substructure, puncturing the sacrificial substructure with a puncture plate to secure the sacrificial substructure to the puncture plate, and detaching the sacrificial substructure from the support structure by moving the puncture plate with respect to the support structure.

De-tape tool

A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Dielectric film for semiconductor fabrication

Growing community of inventors

Taipei, Taiwan

Chen Liang Chang