Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Hubei Sanan Optoelectronics Co., Ltd.

Quanzhou Sanan Semiconductor Technoogy Co., Ltd.

Chen-Ke Hsu

Junpeng Shi

Chia-En Lee

Chih-Wei Chao

Jiansen Zheng

Weng-Tack Wong

Su-Hui Lin

Zhibai Zhong

Zhen-Duan Lin

Chi-Wei Liao

Xiaojuan Shao

Jianming Liu

Shao-Ying Ting

Zhenduan Lin

Jie Zhang

Yanqiu Liao

Junyong Kang

Pei-Song Cai

Hao Huang

Zheng Wu

Jinjian Zheng

Shunyi Chen

Anhe He

Kechuang Lin

Xinglong Li

Xueliang Zhu

Junfeng Fan

Lixun Yang

Senpeng Huang

Wen-Yu Lin

Xiaoxiong Lin

Hui Chen

Changchin Yu

Aihua Cao

Shuning Xin

Chengxiao Du

Jun-Peng Shi

Xing-Hua Liang

Kang-Wei Peng

Sheng-hsien Hsu

Kangwei Peng

Jiali Zhuo

Qiuxia Lin

Yen-Chih Chiang

Shengchang Chen

Jianbin Tu

Ping Zhang

Chun-Yi Wu

Shaohua Huang

Chung-Ying Chang

Gong Chen

Xinghua Liang

Chang-Cheng Chuo

Yu-Chieh Huang

Hou-Jun Wu

Heqing Deng

Huining Wang

Bing-Yang Chen

Te-Ling Hsia

Tung-Kai Liu

Xiangxu Feng

Hongquan He

Qiuyan Fang

Chenjie Liao

Xing-Long Li

Weng Tack Wong

Juwei Lee

Disclosed is a light-emitting structure including a light-emitting diode and a connecting unit. The light-emitting diode includes an epitaxial laminate, a first electrode, and a second electrode. The epitaxial laminate includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer. The connecting unit is connected to the epitaxial laminate.

Light-emitting structure and light-emitting device including the same

A light emitting diode (LED) device includes at least three LED chips spaced apart from one another, an encapsulation layer and a lens. Each of the LED chips is configured to emit light having a respective one of wavelengths. The LED chips cooperate to have a light emitting region. Each LED chip has a first surface, a second surface opposite to the first surface, and a lateral surface that interconnects the first and second surfaces. The encapsulation layer covers the lateral surface of each of the LED chips, and fills gaps between the LED chips. The lens is disposed on the first surface of each of the LED chips, and covers the light emitting region of the LED chips.

Light emitting diode device, method for manufacturing the same and a display including the same

A light emitting diode (LED) package includes a substrate, a metal stage, at least one LED chip and a packaging material. The substrate has an super surface, and a lower surface opposite to the upper surface. The metal stage is formed on the upper surface of the substrate, and has a lumpy structure. The LED chip is mounted on the metal stage. The packaging material covers the LED chip, the metal stage and the substrate. The packaging material and the lumpy structure of the metal stage are engaged with each other.

Light emitting diode (LED) package and method for manufacturing the same

A light-emitting diode (LED) packaging module includes a plurality of LED chips spaced apart from one another, an encapsulating layer that fills in a space among the LED chips, a light-transmitting layer disposed on the encapsulating layer, a wiring assembly disposed on and electrically connected to the LED chips, and an insulation component that covers the encapsulating layer and the wiring assembly. Each of the LED chips includes an electrode assembly including first and second electrodes. The light-transmitting layer includes a light-transmitting layer that has a light transmittance greater than that of the encapsulating layer.

Light-emitting diode packaging module

A light-emitting diode (LED) packaging module includes light-emitting units arranged in an array having m row(s) and n column(s), an encapsulating layer, and a wiring assembly, where m and n each independently represents a positive integer. Each of the light-emitting units includes LED chips each including a chip first surface, a chip second surface, a chip side surface, and an electrode assembly disposed on the chip second surface. The encapsulating layer covers the chip side surface and fills a space among the LED chips. The wiring assembly is disposed on the chip second surface and is electrically connected to the electrode assembly.

Light-emitting diode packaging module having encapsulated array of LED chips

A method for transferring a micro semiconductor element includes the following steps. A substrate, a bonding layer disposed on the substrate, and a supporting member disposed on the bonding layer opposite to the substrate are provided. The supporting member is bonded to a micro semiconductor element for supporting the same. A through hole is provided to extend through the substrate, the bonding layer, and the supporting member so as to forma transfer structure. A separation force is applied via the through hole to separate the micro semiconductor element from the supporting member.

Structure and method for transferring a micro semiconductor element by applying a separation force via a through hole

The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

Laser device and light guide member used with the same

A light-emitting diode (LED) packaging module includes LED chips, a wiring layer, and an encapsulant component. Each of the LED chips includes a chip first surface, a chip second surface, a chip side surface, and an electrode unit. The wiring layer is disposed on the chip second surfaces of the LED chips, and contacts and is electrically connected to the electrode units. The encapsulant component includes a first encapsulating layer that covers the chip side surface, and a second encapsulating layer that covers the wiring layer. The LED chip has a thickness T, the first encapsulating layer has a thickness T, in which T/T≥1.

A packaged ultraviolet light-emitting device includes a support member, at least one ultraviolet light-emitting chip, and an encapsulating cover. The support member has opposite top and bottom surfaces, a side surface interconnecting the top and bottom surfaces, and at least one indentation. The ultraviolet light-emitting chip is disposed on the top surface of the support member. The encapsulating cover is made from a fluorine-containing resin, and is disposed over and in contact with the ultraviolet light-emitting chip and the top surface and the indentation of the support member. The encapsulating cover extends into the indentation. A production method of the packaged ultraviolet light-emitting device is also disclosed.

Packaged ultraviolet light-emitting device and production method thereof

A micro light-emitting device includes a support structure with a cavity and at least one micro light-emitting element that includes a semiconductor structure accommodated by the cavity, at least one bridge connection member disposed on the semiconductor structure to interconnect the semiconductor structure and the support structure, and a protruding contact member disposed on at least one of the semiconductor structure and the bridge connection member and protruding therefrom to be configured to contact with a transfer means. The device is configured to contact with the transfer means at the protruding contact member of the element. A transfer method using the device is also disclosed.

Micro light-emitting element and device and transfer method thereof

An LED device includes a substrate, a conductive layer, an LED chip, and a discharge element. The substrate has upper and lower surfaces and four edges interconnected to one another and surrounding the upper surface. The conductive layer is formed on the upper surface, and has first and second regions electrically separated by a trench. The trench has a first segment inclined relative to each edge of the substrate by a predetermined angle ranging between 0 and 90 degrees, and a second segment connected to the first segment. The LED chip is disposed across the first segment, and the discharge element is disposed across the second segment, both interconnecting the first and second regions.

Light-emitting diode device

The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(λ), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(λ), P(λ) is the maximum light intensity within 380-780 nm, S(λ) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(λ) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(λ)=P(λ)/P(λ)−S(λ)/S(λ), −0.15<D(λ)<0.15.

White light LED package structure and white light source system

A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.

Flip-chip LED structure and fabrication method

A micro light-emitting device includes a micro light-emitting diode and a light-emitting structure. The micro light-emitting diode includes a semiconductor light-emitting unit that emits an excitation light having a first wavelength. The light-emitting structure is disposed on the micro light-emitting diode, and is configured to be excited by the excitation light to emit an excited light having a second wavelength. The light-emitting structure is a multiple quantum well structure. A display including the micro light-emitting device is also disclosed.

Micro light-emitting device and display

Growing community of inventors

Xiamen, China

Chen-Ke Hsu