Blackberry Corporation

Bae Systems Information and Electronic Systems Integration Inc.

Research in Motion Corporation

Paratek Microwave Incorporated

Chen J Zhang

John E King

Luna H Chiu

Barry Treadway

George Kang

Louise C Sengupta

Tadd C Kippeny

Pierre-Alain S Auroux

Don A Harris

Myeongseob Kim

Laura A Swafford

Somnath Sengupta

Igor I Smolyaninov

Idan Mandelbaum

James A Stobie

Michael J Bowers, Ii

Christopher S Badorrek

A photon-activated quantum dot capacitor and method of fabrication. A photon-activated quantum dot capacitor photodetector having a read only integrated circuit; and a photon-activated quantum dot capacitor chip hybridized with the read only integrated circuit, wherein said photon-activated quantum dot capacitor chip comprises colloidal quantum dots that detect photons as a change in a dielectric constant of the colloidal quantum dots of the photon-activated quantum dot capacitor chip, including the further implementation of a photodetector.

Photo-activated quantum dot capacitor photodetectors

The system and method for destroying compromised objects, including electronic devices. The system and method utilizes a barrier separating two reagents that can be rapidly mixed to form a base when desired. The system and method have a barrier configured to be triggered remotely. The barrier comprises an aluminum foil layer.

Method and apparatus for destructing compromised devices

An embodiment of the present invention provides a method of applying patterned metallization to a ceramic block comprising applying a photodefinable ink to said ceramic block; drying said ink; exposing said photodefinable ink to UV radiation through a predefined mask according to the thickness of the film to form a pattern; developing said pattern in a developer solution thereby forming a patterned ceramic block; and rinsing, drying and firing said patterned ceramic block.

Method of applying patterned metallization to block filter resonators

A tunable dielectric chip, and method of manufacture therefore, that comprises a dielectric substrate, the dielectric substrate patterned to a critical dimension, a metallized portion integral to the dielectric substrate, and an encapsulant covering an any portion of the dielectric substrate not covered by the metallized portion. A thin titanium layer can be deposited in between the metallized portion and the dielectric substrate to promote adhesion. The dielectric substrate can be a dielectric thick film. The thickness of the titanium can vary from 200A to 500A and the metallized portion integral to the dielectric substrate in a preferred embodiment is gold and varies in thickness from 3 um to several microns depending on the application. Further, in the present preferred embodiment, the encapsulant is a photo-definable encapsulant. The present invention also provides solder pads integral to the metallized portion enabling maximan protection from moisture and other contaminants. The metallized portion discussed above in a preferred embodiment is formed by cleaning the surface of the thick film tunable dielectric, applying a photoresist coating of a thin film metal to the thick film tunable dielectric, soft baking the thick film tunable dielectric with the thin film metal coated thereon, exposing the thick film tunable dielectric with the thin film metal coated thereon, post exposure baking the thick film tunable dielectric with the thin film metal coated thereon; and developing the thick film tunable dielectric with the thin film metal coated thereon.

Fabrication of Parascan tunable dielectric chips

Growing community of inventors

Clarksville, MD, United States of America

Chen J Zhang