Applied Materials, Inc.

Chen Han Lin

Siddarth A Krishnan

Paul F Ma

Yixiong Yang

Yu Lei

Naomi Yoshida

Wei V Tang

Yi Xu

Shih Chung Chen

Lin Dong

Wenyu Zhang

Chi-Chou Lin

Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum films

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Campbell, CA, United States of America

Chen Han Lin