Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Other

Chen Han Chou

Chenming Hu

Yen-Teng Ho

Wen-Chuan Kuo

Shu-Jui Chang

Kai-Yu Peng

Tsung-Fu Yang

Tsung-Han Lin

Cheng Hung Shen

Chiung-Yuan Lin

Tsung-Kai Lin

Weicheng Chu

Chia-Ho Yang

Chih-Hung Chung

Ching Liang Chang

Chia Hsing Wu

A device comprises a plurality of 2D semiconductor nanostructures, a gate structure, a source region, and a drain region. The plurality of 2D semiconductor nanostructures extend in a first direction above a substrate and arranged in a second direction substantially perpendicular to the first direction. The gate structure surrounds each of the plurality of 2D semiconductor nanostructures. The source region and the drain region are respectively on opposite sides of the gate structure.

Transistors having two-dimensional semiconductor channels

A semiconductor device includes a substrate, a 2-D material layer, source/drain contacts, and a gate electrode. The 2-D material layer is over the substrate, the 2-D material layer includes source/drain regions and a channel region between the source/drain regions, in which the 2-D material layer is made of a transition metal dichalcogenide (TMD). The source/drain contacts are in contact with source/drain regions of the 2-D material layer, in which a binding energy of transition metal atoms at the channel region of the 2-D material layer is different from a binding energy of the transition metal atoms at the source/drain regions of the 2-D material layer. The gate electrode is over the substrate.

Semiconductor device having a 2-D material layer including a channel region and source/drain regions and method for forming the same

In an optical heterodyne surface plasma wave detecting method and apparatus, light that contains correlated Pand Pwave components (TM waves) is directed to a total reflective component such that two surface plasma waves are generated at an interface of a metal film and a test object. Light reflected from the total reflective component is detected to obtain an optical heterodyne test signal that is compared with an optical heterodyne reference signal to determine changes in at least one of amplitude and phase of the optical heterodyne signal relative to the optical heterodyne reference signal.

Optical heterodyne surface plasma wave detecting method and apparatus

Growing community of inventors

Tainan, Taiwan

Chen Han Chou