Semileds Optoelectronics Co., Ltd.

Other

Shin-etsu Chemical Co., Ltd.

Semileds Corporation

Tslc Corporation

Hiphoton Co., Ltd.

Semi-photonics Co., Ltd.

Semileds Optoelectronics Co., Co., Ltd.

Chen-Fu Chu

Hao-Chun Cheng

Feng-Hsu Fan

Chao-Chen Cheng

Wen-Huang Liu

Trung Tri Doan

Jiunn-Yi Chu

Chuong Anh Tran

Jui-Kang Yen

Yuan-Hsiao Chang

Fu-Hsien Wang

David Trung Doan

Li-Wei Shan

Shih-Kai Chan

Kazunori Kondo

Toshiyuki Ozai

Nobuaki Matsumoto

Shuhei Ueda

Yoshinori Ogawa

Taichi Kitagawa

Yi-Feng Shih

Kohei Otake

Keiji Ohori

Chen-Hsien Chu

Hao-Chung Cheng

Tien Wei Tan

Yung Wei Chen

Hung-Jen Kao

Trung-Tri Doan

Chung-Che Dan

Yang Po Wen

Hsun-Cheng Chan

A semiconductor component for fabricating semiconductor structures includes a plate having an elastomeric polymer layer thereon and at least one semiconductor structure adhesively attached to the elastomeric polymer layer. A semiconductor structure includes a first semiconductor layer and a second semiconductor layer with an active layer therebetween. The semiconductor structure also includes a plurality of mesas including at least one shorting mesa and at least one non-shorting mesa physically connected to the first semiconductor layer. A method for fabricating semiconductor structures includes the steps of: forming a plurality of semiconductor layer structures on the substrate, forming an elastomeric polymer layer on a receiving plate and attaching the elastomeric polymer layer to the semiconductor structures, and separating the semiconductor structures from the substrate with the semiconductor structures attached to the receiving plate.

Semiconductor components and semiconductor structures and methods of fabrication

A packaged LED device comprising: a pad-extended LED chip comprising: at least one LED chip having a substrate, a first semiconductor layer, an active layer and a second semiconductor layer; a first pad electrically connected to the first type semiconductor layer and a second pad electrically connected to the second type semiconductor layer; and a first extended metal layer connected to the first pad and a second extended metal layer connected to the second pad.

Method of making a packaged device

A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Method for fabricating (LED) dice using laser lift-off from a substrate to a receiving plate

Method for fabricating (LED) dice using semiconductor structures on a substrate and laser lift-off to a receiving plate

A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.

Semiconductor continuous array layer

A structure of a semiconductor array comprises multiple semiconductor units, an isolation layer and a decomposed or buffer unit. Multiple semiconductor units combined the semiconductor array. The isolation layer coated each semiconductor unit. The decomposed or buffer unit coated the isolation layer and filled between each semiconductor unit to enhance structure of the semiconductor units. Wherein, the isolation layer protected by edge of the semiconductor units and the decomposed or buffer unit.

Structure of a semiconductor array

A high-brightness vertical light emitting diode (LED) device includes an outwardly located metal electrode having a low illumination side and a high illumination side. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

Light emitting diode device having electrode with low illumination side and high illumination side

The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.

Optical semiconductor structure for emitting light through aperture

The invention discloses a light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second type semiconductor layer; a cathode electrode has a conductive metal layer in electrical contact with a portion of the first type semiconductor layer, and the second type semiconductor layer to form a short circuit structure in a common cathode region; and an anode electrode has the conductive metal layer and coupled to a portion of the first type semiconductor layer; wherein, the anode electrode is electrically isolated with the active layer and the second type semiconductor layer in a sub-pixel region.

Light engine array

A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module; The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.

Methods of filling a flowable material in a gap of an assembly module

The invention discloses a light engine array comprises a multiple light engines arranged into an array, multiple dams located on a first surface of the light engines; and the dams combined a dam array.

A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.

Method for fabricating a light emitting diode (LED) die having protective substrate

A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.

Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication

A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Smart integrated semiconductor light emitting system including nitride based light emitting diodes (LED) and application specific integrated circuits (ASIC)

Growing community of inventors

Hsinchu, Taiwan

Chen-Fu Chu