Epistar Corporation

Formosa Epitaxy Incorporation

Chen-Fu Chiang

Chun-Ju Tun

Cheng-Huang Kuo

Yi-Chao Lin

A compound semiconductor device is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second doped region; a semiconductor layer disposed on the substrate; and a buffer layer located between said substrate and said semiconductor layer; wherein doping conditions of said first doped region and said second doped region are different from each other; wherein said semiconductor layer has different thicknesses on locations corresponding to said first doped region and said second doped region respectively, and is formed as a structure with difference in thickness.

Compound semiconductor device and method of fabricating the same

A compound semiconductor device and method of fabricating the same according to the present invention is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second doped region, and a semiconductor layer disposed on the substrate, wherein doping conditions of said first doped region and said second doped region may be different from each other.

Growing community of inventors

Taoyuan County, Taiwan

Chen-Fu Chiang