Cyntec Company

Chen-Chung Liu

Ian-Chun Cheng

Sheng-Ju Chou

Keng-Hong Wang

Ching-Hung Liu

The present invention discloses a dielectric filter with multilayer resonator, including a dielectric block, a plurality of multilayer resonator formed in the dielectric block, wherein each multilayer resonator is in a column shape extending in a first direction into the dielectric block and is formed of multiple metal layers paralleling and overlapping each other in a second direction, and vias extend in the second direction and connecting the metal layers in each multilayer resonator, and a ground electrode connected to the ground terminal of each multilayer resonator.

Dielectric filter with multilayer resonator

The invention discloses a balance filter formed from a combination of a first circuit and a second circuit, wherein both the first circuit and the second circuit have at least one through-hole via inductor. The balance filter is connected to an IC through a first terminal and a second terminal, wherein a power trace is disposed between the first circuit and the second circuit to deliver the power to the IC.

Balance filter

The invention discloses a high-frequency device having a through-hole via inductor in a substrate. The through-hole via inductor has an integral body. The inductance of the through-hole via inductor is greater than that of the horizontal inductor. The through-hole via inductor comprises at least two materials, wherein one of said at least two materials is a conductive material. The present invention also discloses a method for manufacturing the structure of the high-frequency device, wherein the method mainly includes via-drilling and via-filling in the substrate, and lithography process on the substrate.

Through-hole via inductor in a high-frequency device

A balun includes a first, second, and third metallic layers, a first dielectric layer disposed between the second and third metallic layers, and a dielectric substrate. The second metallic layer includes a first spiral line having sequentially connected first line segments and a second spiral line having sequentially connected second line segments. A first distance between each two opposite sides of a first region encircled by the innermost first line segments is greater than a second distance between each two adjacent parallel first line segments. A third distance between each two opposite sides of a second region encircled by the innermost second line segments is greater than a fourth distance between each two adjacent parallel second line segments. The third metallic layer includes a third and a fourth spiral lines. The first metallic layer and other elements as a whole are disposed on an opposite surface of the dielectric substrate.

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Hsinchu, Taiwan

Chen-Chung Liu