Taiwan Semiconductor Manufacturing Comp. Ltd.

Chen Chiu-Jung

Kuo-Cheng Lee

Yun-Wei Cheng

Volume Chien

Yung-Lung Hsu

Chen Hsin-Chi

A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.

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Tainan, Taiwan

Chen Chiu-Jung