United Microelectronics Corp.

United Semiconductor Corp.

Chen-Chih Tsai

Yung-Hui Feng

Ching-Hsing Hsieh

Guan-Jiun Liu

Chi-Jui Sung

Jiunn Hsien Lin

Chin-Ching Hsu

A conveyance arm device for conveying wafers. The conveyance arm device comprises a conducting seat, at least a tweezer, and at least a conducting path. The conducting seat controls and drives the conveying operation of the tweezer. The tweezer comprises a first end and a second end, and a first surface and a second surface between the first and the second ends. The first end of the tweezer is connected to the conducting seat. The conducting film is adhered to the second surface of the tweezer.

Conveyance arm device

A method for processing a poly defect is described. A substrate is provided, and a first oxide layer is formed on the substrate. A polysilicon layer is formed on the first oxide layer, and a poly defect is formed on the polysilicon layer surface simultaneous with polysilicon layer formation. A second oxide layer is formed conformal to the substrate, a portion of the second oxide layer and the poly defect are removed by polishing until a thin second oxide layer and a thin poly defect layer are formed. Finally, the thin second oxide layer is removed.

Method for processing a poly defect

A method of forming a contact via includes forming a wiring, a first insulator layer, and a spin-on glass layer, respectively, over a semiconductor substrate. Fluorine ions are implanted into the spin-on glass layer. A second insulator layer is formed over the spin-on glass layer. The wiring is exposed by patterning the second insulator layer, the spin-on glass layer, and the first insulator layer, respectively.

Method of forming a contact via

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Hsinchu, Taiwan

Chen-Chih Tsai