Taiwan Semiconductor Manufacturing Comp. Ltd.

Chen-Chieh Chiang

Chi-Cherng Jeng

Ling-Sung Wang

Jung-Chi Jeng

Kun-Ei Chen

Shyh-Wei Cheng

Yun Shen Chang

Hsueh-Han Lu

Kun-ei Chen

Wen-Sheng Lin

Ru-Shang Hsiao

Chih-Mu Huang

Chih-Kang Chao

Yi-Chung Lin

Jen-Yi Chen

Shiu-Ko JangJian

Chii-Ming M Wu

Jun-Nan Nian

Wei-Barn Chen

Ting-Huang Kuo

Cheng-You Tai

Ching-Hua Kuan

Kun Da Jhong

Yi Ping Chao

Wen-Lung Lai

Nan-Chi Lu

Pei-lum Ma

Hsu Tung Yen

Bo Hsiang Huang

Ching Kang Chen

Chia-Pin Lo

Zhi-hong Chung

Cheng-Chieh Huang

Yen-Han Chen

Hsun-Jui Chang

A container for receiving a semiconductor device is provided. In one embodiment, the wafer holder assembly includes a first wafer holder with a plurality of first fingers arranged in a first common horizontal plane and a second wafer holder with a plurality of second fingers arranged in a second common horizontal plane. The first wafer holder and the second holder are configured to move relative to each other in a vertical direction, and the first wafer holder and the second holder are configured to rotate relative to each other around a vertical axis.

Wafer holder assembly

A semiconductor structure is provided. The semiconductor structure includes an interconnection structure, a first conductive pad, a second conductive pad, a conductive material and a conductive coil. The first and second conductive pads are disposed over and electrically connected to the interconnection structure individually. The conductive material is electrically isolated from the interconnection structure, wherein bottom surfaces of the conductive material, the first conductive pad and the second conductive pad are substantially aligned. The conductive coil is disposed in the interconnection structure and overlapped by the conductive material. A manufacturing method of a semiconductor structure is also provided.

Manufacturing method of semiconductor structure and semiconductor structure thereof

A method for manufacturing a semiconductor structure is provided. The method may include several operations. A first layer is formed over a first region and a second region of a substrate. A first etching is performed on the first layer, thereby forming a first trench in the first region and a second trench in the second region. A first amorphization is performed on the first layer in the second region. A second etching is performed on the first layer, wherein an etching rate of the second etching in the second region is greater than an etching rate of the second etching in the first region.

Method for manufacturing through vias using amorphization to adjust etching rate

A semiconductor structure and a method are provided. The method includes patterning a substrate to form a first fin structure in a first region and a second fin structure in a second region, wherein a first width of the first fin structure is greater than a second width of the second fin structure; forming a protecting layer on the second fin structure; and forming a first oxide layer over the first fin structure and forming a second oxide layer over the protecting layer, wherein a width of the first oxide layer is greater than a width of the second oxide layer.

Semiconductor structure and forming method thereof

A semiconductor device with different gate structures and a method of fabricating the same are disclosed. The a method includes forming a fin structure on a substrate, forming a thermal oxide layer on top and side surfaces of the fin structure, forming a polysilicon structure on the thermal oxide layer, doping portions of the fin structure uncovered by the polysilicon structure to form doped fin portions, forming a nitride layer on the polysilicon structure and the thermal oxide layer, forming an oxide layer on the nitride layer, doping the nitride layer with halogen ions, forming a source/drain region in the fin structure and adjacent to the polysilicon structure, and replacing the polysilicon structure with a gate structure.

Multi-functional transistors in semiconductor devices

A work piece holder provided herein includes a support baffle and an elevating element. The support baffle extends along an arc path. The elevating element is disposed on the support baffle and is pivoted to be movable between an unlock status and a lock status.

Work piece holder and method of transferring a work piece

Semiconductor device structure and methods of forming the same are described. The structure includes a first dielectric layer including a first portion disposed over a source/drain region in an active region of a substrate and a modulation portion over an interlayer dielectric (ILD) in a resistor region of the substrate, the first portion of the first dielectric layer has a first composition, and the modulation portion of the first dielectric layer has a second composition different from the first composition. The structure further includes a resistor layer disposed on the modulation portion of the first dielectric layer in the resistor region and a second dielectric layer disposed over the first dielectric layer in the active region and over the resistor layer in the resistor region.

Semiconductor device structure and methods of forming the same

A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a first trench, and the first trench has a first inner wall and a bottom surface. The method includes forming an anti-bombardment layer over a first top surface of the first mask layer. The method includes forming a second mask layer over the first inner wall of the first trench. The method includes removing the first portion, the first mask layer, the anti-bombardment layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.

Method for forming semiconductor device structure with conductive line

A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The method includes forming a second mask layer over a first top surface of the first mask layer, the inner wall, and the bottom surface. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The method includes forming an anti-bombardment layer over a second top surface of the second mask layer. The second mask layer and the anti-bombardment layer are made of different materials. The method includes removing the first portion, the first mask layer, the second mask layer, and the anti-bombardment layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.

A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a trench. The trench has an inner wall and a bottom surface. The method includes forming a second mask layer in the trench. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The second trench exposes the bottom surface and is over a first portion of the dielectric layer. The remaining second mask layer covers the inner wall. The method includes removing the first portion, the first mask layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.

A method for fabricating a fin field effect transistor (FinFET) is provided. The method includes: patterning a substrate to form a plurality of trenches in the substrate and at least one semiconductor fin between the trenches; forming a plurality of insulators in the trenches; forming a patterned photoresist on the insulators, wherein sidewalls of the semiconductor fin are partially covered by the patterned photoresist, and at least one area of the sidewalls is exposed by the patterned photoresist; by using the patterned photoresist as a mask, partially removing the semiconductor fin from the at least one area of the sidewalls exposed by the patterned photoresist so as to form at least one recess on the sidewalls of the semiconductor fin; removing the patterned photoresist after forming the at least one recess; and forming a gate stack to partially cover the semiconductor fin and the insulators.

Fabricating method of fin field effect transistor

A FinFET including a substrate, a plurality of insulators and a gate stack is provided. The substrate comprises a plurality of trenches and at least one semiconductor fin between the trenches, wherein the semiconductor fin comprises at least one groove, and the at least one groove is located on a top surface of the semiconductor fin. The insulators are disposed in the trenches. The gate stack partially covers the semiconductor fin, the at least one groove and the insulators.

Fin field effect transistor

A semiconductor device and a method of forming the same are disclosed. The semiconductor device includes a substrate, and a source region and a drain region formed in the substrate. The semiconductor device further includes an impurity diffusion stop layer formed in a recess of the substrate between the source region and the drain region, wherein the impurity diffusion stop layer covers bottom and sidewalls of the recess. The semiconductor device further includes a channel layer formed over the impurity diffusion stop layer and in the recess, and a gate stack formed over the channel layer.

Structure and method for semiconductor device

Semiconductor devices and manufacturing method of the same are disclosed. A semiconductor device includes a substrate, a p-type MOS transistor, an n-type MOS transistor and a cured flowable oxide layer. The substrate includes a first region and a second region. The p-type MOS transistor is in the first region. The n-type MOS transistor is in the second region. The cured flowable oxide layer covers the p-type MOS transistor and the n-type MOS transistor, wherein a first strain of the cured flowable oxide layer applying to the p-type MOS transistor is different from a second strain of the cured flowable oxide layer applying to the n-type MOS transistor, and the difference therebetween is greater than 0.002 Gpa.

Semiconductor device and manufacturing method of the same

A FinFET including a substrate, a plurality of insulators and a gate stack is provided. The substrate includes a plurality of trenches and at least one semiconductor fin between the trenches. The insulators are disposed in the trenches. The semiconductor fin includes a first portion embedded between the insulators; a necking portion disposed on the first portion, the necking portion being uncovered by the insulators; and a second portion disposed on the necking portion, wherein a width of the necking portion is less than a width of the first portion. The gate stack partially covers the semiconductor fin, the at least one recess and the insulators.

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Kaohsiung, Taiwan

Chen-Chieh Chiang