Icp Technology Co., Ltd.

Industrial Technology Research Institute

Sentec E&e Co., Ltd.

Sentec Green Energy Technology Co., Ltd.

Chen-Cheng-Lung Liao

Ho-Chieh Yu

Chun-Yu Lin

Jason An Cheng Huang

Tao-Chih Chang

Jing-Yao Chang

Kun-tzu Chen

Hsiao-Ming Chang

Nai-his Hu

Chih-chuan Liang

Disclosed is a flip-chip packaged power transistor module having a built-in gate driver, for outputting a high-power signal of at least tens of amperes, the module including at least one power transistor die which has an active side where at least one source pin, at least one drain pin and at least one gate pin are exposed; a ceramic substrate body which has a conducting junction side and a heat spreading side, a minimal spacing of the gate bonding pad from at least one of the source bonding pad or the drain bonding pad being less than 500 μm, whereby parasitic inductance generated therebetween is reduced; at least one gate driver which has at least one gate pin configured to be soldered to the gate bonding pad, and at least one gate drive pin which corresponds to the gate pin and is configured to be soldered to the drive bonding pad.

Flip-chip packaged power transistor module having built-in gate driver

A motor control device with built-in shunt resistor and power transistor is disclosed, comprising a high-thermally conductive substrate; an electrically conductive circuit which is thermo-conductively installed on the high-thermally conductive substrate and includes a first thermal connection pad portion and a second thermal connection pad portion mutually spaced apart; a high power transistor conductively connected to the electrical conducive circuit; and a shunt resistor conductively connected to the high power transistor, respectively including a body whose thermal expansion coefficient is greater than that of the high-thermally conductive substrate, as well as a pair of welding portions extending from the body, in which the body has a prescribed width, and the width of the welding portion is greater than the prescribed width, and the body and the high-thermally conductive substrate are spaced apart such that, upon welding the welding portion to the first thermal connection pad portion and the second thermal connection pad portion, the thermal expansion stress occurring between the body and the high-thermally conductive substrate can be distributed and undertaken in the width direction.

Motor control device with built-in current sensing resistor and power transistor

A ceramic substrate component suitable for high-power chips includes a ceramic substrate body and at least one raised metal pad. The ceramic substrate body has an upper surface and a lower surface opposite to the upper surface. The raised metal pad includes a base portion and a top layer. The base portion, which is attached to the upper surface of the ceramic substrate body, has a thickness between 10 and 300 micrometers, and a thermal expansion coefficient greater than the ceramic substrate body. The top layer is formed on the base portion and adapted to install a high-power chip thereon. The top layer extends an area less than the base portion but greater than the high-power chip, and has a thermal expansion coefficient greater than the ceramic substrate body. As such, damages due to thermal stress occurring between the base portion and the ceramic substrate body can be mitigated.

Ceramic substrate component/assembly with raised thermal metal pad, and method for fabricating the component

Growing community of inventors

Taoyuan, Taiwan

Chen-Cheng-Lung Liao