Smith International, Inc.

Saphlux, Inc.

Schlumberger Technology Corporation

Chelak Medical Solutions Inc.

Chen Chen

Youhe Zhang

Yuri Y Burhan

Jibin Shi

Jie Song

Michael George Azar

Madapusi K Keshavan

Xiaoge Gan

Bala Durairajan

Huimin Song

Liang Zhao

Michael L Stewart

Zhijun Lin

Jie Cheng

Dhanunjaya R Lakkireddy

Siu Chun M Ho

Joo Won Choi

Balasubramanian Durairajan

Sandeep Tammineni

A miniaturized fiber Bragg grating (FBG) interrogation system may comprise a light source, a FBG sensor, and a photodetector. The FBG sensor may be configured to receive an optical signal from the light source, interact with a transmitted spectrum of the light source over a discriminating spectral domain, and generate a reflected optical signal representative of a change in a physical signal sensed by the FBG sensor. Additionally, the system may include a power management unit configured to reduce power consumption in order to prolong the lifespan of the system.

Miniaturization of fiber Bragg grating interrogation for integration into implantable devices

Aspects of the disclosure provide for mechanisms for producing group III-nitride substrates. In accordance with some embodiments, a method for producing a group III-nitride substrate is provided. The method may include: providing a growth template comprising a semiconductor layer of a group III-nitride material with a nonpolar orientation or a semipolar orientation; fabricating a mask on the semiconductor layer for preventing defects in the growth template from propagating into group III-nitride materials grown on the growth template; and forming, on the mask, an epitaxial layer of the group III-nitride with the nonpolar orientation or semipolar orientation. The mask may include a stripe pattern comprising SiOand/or SiN. Forming the epitaxial layer of the group III-nitride material may include growing the group III-nitride material in the semipolar orientation or the nonpolar orientation in nitrogen carrier gas.

Nonpolar or semipolar group III-nitride substrates

A cutting element may include a substrate and an ultrahard layer. A top surface of the ultrahard layer includes a peripheral edge extending around the cutting element, a cutting crest extending across a major dimension of the cutting element from a cutting edge at a first portion of the peripheral edge to a modified region at a central axis of the ultrahard layer, and a lateral portion extending across a minor dimension of the cutting element from the peripheral edge to the modified region. The modified region along the major dimension includes a concave cross-sectional shape. The lateral portion along the minor dimension from the peripheral edge to the modified region includes one or more of a linear shape and a convex shape, and the modified region along the minor dimension includes a planar shape perpendicular to the central axis.

Cutting elements having non-planar surfaces and downhole cutting tools using such cutting elements

In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device; and a light-conversion device with embedded quantum dots. In some embodiments, a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, and a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color. The third light-emitting device emits light of a third color.

Semiconductor devices incorporating quantum dots

Miniaturization of Fiber Bragg Grating interrogation for integration into implantable devices

Aspects of the disclosure provide for light conversion devices incorporating quantum dots and methods of fabricating the same. In accordance with some embodiments of the present disclosure, a light conversion device is provided. The light conversion device may include. a porous structure comprising one or more nanoporous materials, wherein the one or more nanoporous materials comprise a plurality of pores; and a plurality of quantum dots placed in the porous structure, wherein the plurality of quantum dots comprises a first plurality of quantum dots configured to convert light of a first color into light of a second color, and a second plurality of quantum dots configured to convert the light of the first color into light of a third color. Each of the plurality of pores may have a nanoscale size. The nonporous materials may further include a matrix comprising a semiconductor material, glass, plastic, metal, polymer, etc.

Light conversion devices incorporating quantum dots

In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein each of the plurality of light-emitting devices comprises a first ohmic contact and a second ohmic contact; and a light-conversion device with embedded quantum dots, wherein a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, wherein a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color, and wherein the third light-emitting device emits light of a third color.

A cutting element may include a substrate, an upper surface of the substrate including a crest, the crest transitioning into a depressed region, and an ultrahard layer on the upper surface, thereby forming a non-planar interface between the ultrahard layer and the substrate. A top surface of the ultrahard layer includes a cutting crest extending along at least a portion of a diameter of the cutting element, the top surface having a portion extending laterally away from the cutting crest having a lesser height than a peak of the cutting crest.

A cutting element includes a cutting end extending a depth from a cutting face to an interface surface opposite from the cutting face, and a spindle, the spindle axially separated from the cutting end by a transition region. The spindle has a spindle diameter measured between a spindle side surface, which is less than a cutting end diameter. A guide length, measured from a point of transition to the transition region to a retention feature, is longer than 75% of a total length of the spindle.

Rolling cutter stability

A downhole cutting tool includes a tool body defining a cutter pocket and a rolling cutter having an inner rotatable cutting element and a sleeve in the cutter pocket, where axial movement of the inner rotatable cutting element is limited by an external retention element disposed outside of the sleeve.

Rotating cutting structures and structures for retaining the same

Aspects of the disclosure provide for mechanisms for fabricating light extraction structures for semiconductor devices (e.g., light-emitting devices). In accordance with some embodiments, a semiconductor device is provided. The semiconductor device may include: a first semiconductor layer including an epitaxial layer of a semiconductor material; a second semiconductor layer comprising an active layer; and a light-reflection layer configured to cause at least a portion of light produced by the active layer to emerge from the semiconductor device via a surface of the second semiconductor layer, wherein the light-reflection layer is positioned between the first semiconductor layer and the second semiconductor layer. In some embodiments, the semiconductor material includes gallium nitride. In some embodiments, the light-reflection layer includes a layer of gallium.

Methods for producing light extraction structures for semiconductor devices

Aspects of the disclosure provide for mechanisms for forming air voids for semiconductor fabrication. In accordance with some embodiments, a method for forming air voids may include forming a first semiconductor layer including a first group III material and a second group III material on a substrate; forming a plurality of air voids in the first semiconductor layer by removing at least a portion of the second group III material from the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer may include an epitaxial layer of a group III-V material. In some embodiments, the first group III material and the second group III material may be gallium and indium, respectively.

Air void structures for semiconductor fabrication

A cutting element includes a sleeve, a rotatable cutting element, and at least one retaining ring. The sleeve has a first inner diameter and a second inner diameter, wherein the second inner diameter is larger than the first inner diameter and located at a lower axial position than the first inner diameter. The rotatable cutting element has an axis of rotation extending therethrough, a cutting face, a body extending axially downward from the cutting face, wherein the body has a shaft that is disposed within the sleeve, and a circumferential groove formed around an outer surface of the shaft. The at least one retaining ring is disposed in the circumferential groove and extends at least around the entire circumference of the shaft, wherein the at least one retaining ring protrudes from the circumferential groove, thereby retaining the rotatable cutting element within the sleeve.

Drill bit rolling element with retaining ring

A cutting element assembly includes a sleeve, a lining extending a distance axially from an end of the sleeve, and an inner cutter. The inner cutter has a cutting end, wherein the cutting end extends a depth from a cutting face, a side surface, and a body, wherein the body is at least partially disposed within the sleeve, and wherein the side surface of the cutting end interfaces with an interfacing surface of the lining.

Growing community of inventors

New Haven, CT, United States of America

Chen Chen