Taiwan Semiconductor Manufacturing Comp. Ltd.

Chen-Bin Lin

Ru-Shang Hsiao

Ching-Hwanq Su

I-Shan Huang

Wen-Hsin Chan

Sung-Hsin Yang

Po-Ying Chen

Jie Jay Sun

The present disclosure discloses a structure and a method directed to a semiconductor structure having a resistor structure and a metal-insulator-metal (MIM) capacitor structure formed by a single mask process. The semiconductor structure includes an interconnect structure on a substrate, a first insulating layer on the interconnect structure, first and second conductive plates on the first insulating layer and separated by a second insulating layer, a dielectric layer on the first conductive plate, and a third conductive plate on the dielectric layer. Bottom surfaces of the first and second conductive plates are coplanar.

Semiconductor structure with resistor and capacitor

A structure includes a bulk semiconductor substrate, a first plurality of dielectric isolation regions over the bulk semiconductor substrate, a plurality of semiconductor fins protruding higher than the first plurality of dielectric isolation regions, a first gate stack on top surfaces and sidewalls of the plurality of semiconductor fins, a second plurality of dielectric isolation regions over the bulk semiconductor substrate, a mesa structure in the second plurality of dielectric isolation regions, and a second gate stack over the mesa structure. Top surfaces of the first gate stack and the second gate stack are coplanar with each other.

Integration of multiple transistors having fin and mesa structures

Growing community of inventors

Tainan, Taiwan

Chen-Bin Lin